3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections

Abstract

SOI Si FinFETs scaled to gate lengths of 12.8 nm, 10.7 nm and 8.1 nm are simulated using 3D Finite Element Monte Carlo simulations with 2D Schrödinger based quantum corrections considering two cross-sections: rectangular and triangular, with rounded corners, in the preferred 110 channel orientation. The rectangular FinFETs give larger drive currents per perimeter than the triangular FinFETs but are outperformed by the triangular ones when normalised by channel area. In the scaling process, the drive current increases by about 5% (4%) and 5% (1%) for rectangular (triangular) cross-sections with nearly ideal sub-thresholds of 72 (66) mV/dec. The effect of interface roughness increases during the scaling from 3% to 12% and affects stronger the triangular cross-section FinFETs.