3D resistive RAM cell design for high-density storage class memory—a review

Hudec, Boris; Hsu, Chia-Yang; Wang, I-Ting; Lai, Wei-Li; Chang, Chia-Wei; Wang, Taifang; Fröhlich, K.; Ho, ChiaHua; Lin, Chang-Hong; Hou, Tuo‐Hung

doi:10.1007/s11432-016-5566-0

Cited by 57 publications

(25 citation statements)

References 60 publications

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“…Various flexible RRAM has been broadly reported, generally taking advantages of the flexibility of hybrid stacks comprising thin metal, oxide, and organics films [11][12][13]. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cells lead to failure of write and read operations, is still the main bottle neck problem suppressing its practical application [14][15][16]. One selector-one resistor (1S1R) scheme with two-terminal selector devices have been proved the most promising way to tackle the crosstalk issue without impairing the scalability and high-density integration of the RRAM array.…”

Section: Introductionmentioning

confidence: 99%

Flexible cation-based threshold selector for resistive switching memory integration

Zhao

Wang

Xiao

et al. 2018

Sci. China Inf. Sci.

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Emerging resistive switching random access memory (RRAM), considered as the most promising candidate of flash memory, is favorable for in flexible electronic system. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cell lead to failure of write and read operations, still keeps a main bottleneck. Therefore, flexible selector compatible with the flexibility of the RRAM array should be focused on to configure one selector-one resistor (1S1R) system, which is immune to crosstalk issue. In this paper, flexible cation-based threshold switching (TS) selectors (Pt/Ag/HfO 2 /Pt/Ti/parylene) are fabricated and the compressive performance is studied systematically. The device shows excellent bidirectional volatile TS characteristics, including high selectivity ratio (10 9 ), low operating voltages (|V TH |<1 V), ultra-low leakage current (∼10 −13 A) and good flexibility. The successful demonstration of the wire connected 1S1R unit comprising this flexible selector and one bipolar resistor cell indicates the great potential of this cation-based selector to restrain the crosstalk issue in a large flexible RRAM array.Keywords cation-based threshold switching, resistive switching, flexible selector, conductive filament (CF), 1S1R CitationZhao X L, Wang R, Xiao X H, et al. Flexible cation-based threshold selector for resistive switching memory integration. Sci China Inf Sci, 2018, 61(6): 060413, https://doi.

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Section: Introductionmentioning

confidence: 99%

Flexible cation-based threshold selector for resistive switching memory integration

Zhao

Wang

Xiao

et al. 2018

Sci. China Inf. Sci.

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“…For high‐density storage, the goal of lowering the cost/bit and increasing the memory density is further emphasized. Comprehensive reviews of strategies and issues in 3D RRAM integration can be found . Generally, a 3D RRAM array can be built by either directly stacking planar crossbar and insulating dielectric layers alternatively (Figure A) or adopting the V‐RRAM architecture.…”

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

“…Comprehensive reviews of strategies and issues in 3D RRAM integration can be found. 118,134 Generally, a 3D RRAM array can be built by either directly stacking planar crossbar and insulating dielectric layers alternatively ( Figure 11A) or adopting the V-RRAM architecture. The former approach has been actively developed by industry researchers.…”

Section: D Integrationmentioning

confidence: 99%

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

211

142

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Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

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“…Memory is an important component in the wearable biomedical electronic devices system to store the information detected by sensors. As an emerging non-volatile memory, resistive random-access memory (RRAM) has the advantages of low power consumption, simple structure, high switching speed and high intensity, and it is easy to integrate with other devices [11][12][13][14][15][16][17][18]. So RRAM is an appropriate memory for the wearable biomedical electronic devices and systems.…”

Section: Introductionmentioning

confidence: 99%