3D thermal conduction in a nanoscale Tri-Gate MOSFET based on single-phase-lag model

Study of Heat Dissipation Mechanism in Nanoscale MOSFETs Using BDE Model

“…We include this parameter in the ETC to portend the rise of the temperature in nanostructure. To validate our results, the proposed model is tested with results obtained by Yang et al [23] and a previous work [2,9]. The proposed (ETC) will be compared with the results obtained by McGaughey et al [31].…”

“…In recent years, the thermal analysis is important to inquire the phonon transport in nano-materials. The study of the heat conduction in nano-electronics lead to compare the thermal stability of nanotransistors [1][2][3]. The increase of the heat dissipation has been owned by the miniaturization and the reduction of the thermal conductivity [3].…”

“…The phonon hydrodynamic model [16][17][18][19], single-phase-lag model [2] and dual-lag phase model [1] have been applied in modeling thermal transport in nanostructures. Nasri et al [2,3] have been investigated the heat transfer in many architecture of nano-MOSFET. They found that the Tri-gate SOI-MOSFET with a wideness of 20 nm is more thermally stable than the device having a length of 10 nm.…”

“…They found that the Tri-gate SOI-MOSFET with a wideness of 20 nm is more thermally stable than the device having a length of 10 nm. To study the nature of collision, it is found that the temperature jump boundary condition was an accurate approach to explore the heat transport in interfaces [2]. The ballistic-diffusive equation (BDE) was used to explain the temperature dependence in nano-structure [20,21].…”

Optimization of microfluidic biosensor efficiency by means of fluid flow engineering

“…To find the numerical solution to these equations, a computer code was developed 36 . Firstly, the 2D domain is divided in triangular elements as presented in Fig.…”