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Soulière, Marguerite; Moreau, Denise

doi:10.18192/aporia.v7i3.2810

Cited by 3 publications

(1 citation statement)

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“…First we synthesized trimethylindium-trimethylamine adduct by simple original way through an organomagnesium compound [2]. The liquid trimethylindium-diethyloxide intermediate compound avoided the manipulation of base free bimethylindium.…”

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confidence: 99%

New Precursor for Epitaxial Growth of Indium Phosphide Synthesis and vapor pressure studies

Soulière

Ábrahám²,

Bouix³

et al.

Sixth International Conference Metalorganic Vapor Phase Epitaxy

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MOVPE growth of InP by reaction of usual indium alkyls with phosphine displays different problems [ 11 : incomplete pyrolysis of phosphine, non volatile polymer deposit, hazardous manipulations of phosphine and trimethylindium, contamination of the epitaxial layers ...In view to substitute trimethylindium by a new organoindium precursor, trimethylindium-trimethylamine adduct was chosen. This is an addition compound between a Lewis acid, trimethylindium and a Lewis base, trimethylamine. Complex formation stabilizes trimethylindium and so improves security of storage and handling of this material ; adducts are generally non pyrophoric and relatively stable to air and moisture compounds. First we synthesized trimethylindium-trimethylamine adduct by simple original way through an organomagnesium compound [2]. The liquid trimethylindium-diethyloxide intermediate compound avoided the manipulation of base free bimethylindium.The solid adduct was first purified by vacuum sublimation ; its purity was then improved through zone refining. It was characterized by vibration spectroscopies (infrared and Raman) and proton nuclear magnetic resonance. Its decomposition temperature determined by Raman spectroscopy was found to be about 138 "C.Our vapor pressure measurements on trimethylindium, trimethylindiumtrimethylamine and DADI (3-dimethylaminopropyldimethylindium) and the comparison with some other indium precursors described in the literature shows that trimethylindiumtrimethylamine pressure is the closer to that of trimethylindium. We measured 1.4 1 hPa, 0.97 hPa and 0.29 hPa at 20 OC for trimethylindium, trimethylindium-trimethylamine and DADI respectively. The phosphine trialkyls adduct with trimethylindium have also lower vapor pressure than trimethylindium-trimethylamine [3].Calorimetric experiments and vapor pressure studies of trimethylindiumtrimethylamine adduct exhibits a melting point of 71.6 OC and 73.9 "C respectively, which is much higher than those given in the literature [4] (66.2-66.4 "C). This can be explained by the good purity of our product which has been purified two times ; moreover the quality of the source materials synthesized may have improved since 1956. This is confirmed by the pressure data we have found lower than those given by Coates [4] ; our pressure measuring procedure may eliminate the effect of volatile contaminants.The comparison of the behavior of trimethylindium and trimethylindiumtrimethylamine compound with phosphine by growing indium phosphide epitaxial layers is carried out.Trimethylindium-trimeth ylamine adduct has already been tested for epitaxial growth of indium phosphide [5,6] showing good quality of the layers obtained, 600 O C being the best temperature growth and 90 the best V/III ratio. 11

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mentioning

confidence: 99%

New Precursor for Epitaxial Growth of Indium Phosphide Synthesis and vapor pressure studies

Soulière

Ábrahám²,

Bouix³

et al.

Sixth International Conference Metalorganic Vapor Phase Epitaxy

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La parentalité des personnes handicapées mentales sous vigilance

Parentelli

2020

alterjdr

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La parentalité est aujourd’hui érigée en compétence, ce qui accentue la responsabilité des parents. L’expertise/conseil se développe dans divers champs scientifiques et produit des normes de parentalité utilisées par les pouvoirs publics pour construire leurs dispositifs destinés à des parents catégorisés comme vulnérables. Au niveau de la loi, les personnes handicapées mentales sont considérées comme vulnérables sur appréciation du juge et, de ce fait, plus ou moins capables juridiquement de se protéger et de défendre leurs intérêts. Pour autant, elles peuvent être amenées à protéger un enfant et à défendre ses intérêts, puisqu’elles ont la liberté de devenir parents. Cette liberté, longtemps entravée, est de nos jours considérée comme possible, ce qui amène les dispositifs à prendre en compte la parentalité des personnes handicapées mentales dans leur accompagnement. Cette note de recherche s’appuie sur une étude qualitative menée auprès de douze professionnels accompagnant ces parents ou futurs parents. L’auteure y analyse les tensions et enjeux auxquels les professionnels sont soumis et la manière dont ils construisent leur expertise. Au regard des résultats et de leurs intérêts pour les champs professionnels concernés, elle envisage des perspectives d’innovation destinées à optimiser les dispositifs existants.

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