4 -12 GHz InP HEMT-based MMIC low-noise amplifier

Abstract

In this paper, we present a monolithically integrated 3-stage low-noise amplifier working in the 4-12 GHz band. The circuit was fabricated on our in-house 0.2 ym InP HEMT process using coplanar waveguide technology. In the band of interest, the fabricated amplifier shows an average noise figure of 1.25 dB and an average gain of 28 dB with a gain ripple of *2 dB at room temperature. The total dc power consumption of the LNA is 41 mW.At a temperature of 10 K, an average gain of 27 cU3 and average noise temperature of 13 K was achieved, whereas the dc power consumption was reduced to 5.7 mW.

Magnetic field tuning of coplanar waveguide resonators

“…Measurements from 20 mK to 2 K were made in a dilution refrigerator fitted with a cold InP HEMT 20 preamplifier having a bandwidth of 4-8 GHz. This system allows observation of only the fundamental resonance, but has high sensitivity and temperature stability.…”

Cryogenic performance of a 3–14 GHz bipolar SiGe low-noise amplifier

“…Among these applications, the scalability of terahertz superconductor-insulatorsuperconductor (SIS) based systems has motivated the development of intermediate frequency (IF) LNAs with ultra-low power consumption. In that range of intermediate frequencies, there has been a great effort in the development of cryogenic low-noise amplifiers over the last years, which have shown the best performance in terms of noise temperature, as low as 4 K, using technologies based on high-electron mobility transistors (HEMT) such as indium phosphide (InP) HEMT [1][2][3][4][5]. Other technologies, like gallium arsenide (GaAs) metamorphic HEMT [6] and more recently silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), have also demonstrated outstanding noise performance in those frequency bands [7 -15].…”