4.25
                dB
           gain in a hybrid silicate/phosphate glasses optical amplifier made by wafer bonding and ion-exchange techniques

Gardillou, Florent; Bastard, Lionel; Broquin, Jean-Emmanuel

doi:10.1063/1.1829141

Cited by 30 publications

(14 citation statements)

References 8 publications

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“…The refractive index modification occurs at the focal point of the high-energy pulses and in the ion-implanted region for femtosecond laser writing and focused proton beam writing, respectively. He + ion implantation [99], ion exchange [118,119,123,125,130,136,144,146,148,149,[198][199][200], and ion indiffusion [34,81] are also used to alter the local refractive index through photolithography and patterning over a large wafer area. Typically, the index change which results from these methods is on the order of 1¢10 3 to 1¢10 2 .…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

“…Lateral confinement can also be achieved in planar waveguiding films by etching rib or ridge waveguide structures. Etching techniques include Ar-ion beam etching [36,68,128,131,133,201], etching either the substrate [123,125] or over-layer (striploading) [40,87,150,174], reactive ion etching (RIE) [32,59,75,108,109,137,138,145,153,156,169,170,175,176,193], and wet chemical etching [79,129,152,157,166,177]. Of these etching methods, RIE provides the best control and resolution.…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

“…D. B. Bradley and M. Pollnau: Erbium-doped integrated waveguide amplifiers and lasers many glass host materials have been investigated for active planar devices. These include silicate glass [32,[114][115][116][117], phosphate glass [39,81,[118][119][120][121][122][123][124], fluoride glass [125], and amorphous aluminum oxide [36,[126][127][128][129]. In addition, multi-component oxide glasses [38,[130][131][132][133][134][135][136][137][138][139][140][141][142][143][144][145] offer the possibility to tailor various properties such as the gain spectrum and the refractive index.…”

Section: Laser and Photonics Reviewsmentioning

confidence: 99%

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Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

326

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Section: Laser and Photonics Reviewsmentioning

confidence: 99%

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Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

326

161

View full text Add to dashboard Cite

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“…Over the last two decades there has been significant interest in rare-earth-ion-doped planar waveguide amplifiers [1][2][3][4][5][6][7][8][9] for integrated optical applications. Such low-cost, compact components can be very useful for amplifying optical signals at a high data rate of 170 Gbit/s [8] and compensating optical losses owing to waveguide materials, signal routing, and input/output coupling within an integrated optical circuit.…”

Section: Introductionmentioning

confidence: 99%

High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm

et al. 2010

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Neodymium-doped aluminum oxide films with a range of Nd 3+ concentrations are deposited on silicon wafers by reactive co-sputtering, and single-mode channel waveguides with various lengths are fabricated by reactive ion etching. Photoluminescence at 880, 1060, and 1330 nm from the Nd 3+ ions with a lifetime of 325 µs is observed. Internal net gain at 845-945 nm, 1064, and 1330 nm is experimentally and theoretically investigated under continuous-wave excitation at 802 nm. Net optical gain of 6.3 dB/cm at 1064 nm and 1.93 dB/cm at 1330 nm is obtained in a 1.4-cm-long waveguide with a Nd 3+ concentration of 1.68 × 10 20 cm −3 when launching 45 mW of pump power. In longer waveguides a maximum gain of 14.4 dB and 5.1 dB is obtained at these wavelengths, respectively. Net optical gain is also observed in the range 865-930 nm and a peak gain of 1.57 dB/cm in a short and 3.0 dB in a 4.1-cm-long waveguide is obtained at 880 nm with a Nd 3+ concentration of 0.65 × 10 20 cm −3 . By use of a rate-equation model, the gain on these three transitions is calculated, and the macroscopic parameter of energy-transfer upconversion as a function of Nd 3+ concentration is derived. The high internal net gain indicates that Al 2 O 3 :Nd 3+ channel waveguide amplifiers are suitable for providing gain in many integrated optical devices.

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“…9,10 In 2004, Gardillou et al demonstrated the possibility to associate a thin amplifying layer with a glass ion-exchanged waveguide in order to obtain a hybrid silicate/phosphate glass optical amplifier with 4.25 dB of gain. 11 Epoxy-free wafer bonding has also been successfully used to realize a polarization-insensitive Bragg filter on ion-exchanged waveguide. 12 In such a hybrid structure, the active layer thickness is limited by the required single mode operation of the device and by the interaction of light with the ion-exchanged waveguide, which must be strong enough to ensure an efficient lateral confinement of the guided mode.…”

mentioning

confidence: 99%

Hybrid magneto-optical mode converter made with a magnetic nanoparticles-doped SiO2/ZrO2 layer coated on an ion-exchanged glass waveguide

Amata

Royer

Choueikani

et al. 2011

Applied Physics Letters

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International audienceThis paper describes the possibility to achieve a TE-TM mode conversion in a magneto-optical hybrid waveguide operating at k¼1550 nm. This hybrid device is made by coating a SiO2/ZrO2 layer doped with magnetic nanoparticles on an ion-exchanged glass waveguide. Soft annealing (90 C) and UV treatment, both compatible with the ion exchange process, have been implemented to finalize the magneto-optical film. Optical characterizations that have been carried out demonstrated the efficiency of these hybrid structures in terms of lateral confinement and mode conversion. Indeed, TE to TM mode conversion has been observed when a longitudinal magnetic field is applied to the device. The amount of this conversion is discussed taking into account the distribution of light between the layer and the guide, and the modal birefringence of the structure

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4.25 dB gain in a hybrid silicate/phosphate glasses optical amplifier made by wafer bonding and ion-exchange techniques

Cited by 30 publications

References 8 publications

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped integrated waveguide amplifiers and lasers

High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm

Hybrid magneto-optical mode converter made with a magnetic nanoparticles-doped SiO2/ZrO2 layer coated on an ion-exchanged glass waveguide

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