Long-wavelength light-emitting diode
(LED) devices in the visible
band (>492 nm) and their applications in high-speed visible light
communication (VLC) have attracted tremendous research interest recently.
The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime
in InGaN quantum well (QW), which is a fundamental problem limiting
the data rate of high-speed VLC systems. In order to achieve an over
GHz E-O bandwidth for applicable packaged LEDs, it is necessary to
innovate from the material level in the active region. This work aims
to break through the modulation bandwidth bottleneck of VLC systems
based on green micro-LED. Commercial LEDs suffer a very limited E-O
bandwidth due to their long radiative recombination carrier lifetime
and large resistance-capacitance delay. Herein, by the utilization
of green InGaN quantum dots (QDs) as the active region of micro-LED,
this constraint can be remarkably alleviated. Green micro-LEDs containing
five layers of InGaN QDs are fabricated, packaged, and then applied
in a line-of-sight (LOS) VLC system over a 2 m free-space channel.
The VLC system based on a single-pixel 50 and 75-μm diameter
green micro-LEDs can achieve high modulation bandwidths up to 1.22
and 1.14 GHz, respectively. Then, real-time non-return-to-zero on–off
keying (NRZ-OOK) and offline pulse-amplitude modulation four-level
(PAM-4) as two common schemes in short-distance optical communication
are adopted to evaluate the VLC system performances. A real-time 2.1
Gbps NRZ-OOK and an offline 5 Gbps PAM-4 VLC links are achieved with
BERs of 2.74 × 10–3 and 1.88 × 10–3 above the forward error correction (FEC) criterion
of 3.8 × 10–3, respectively. To the best of
our knowledge, this is the highest-recorded modulation bandwidth and
communication rate for a single-pixel green micro-LED-based VLC system.