2007
DOI: 10.1002/adma.200700401
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4,4′‐Spirobi[cyclopenta[2,1‐b;3,4‐b′]dithiophene: A New Generation of Heterocyclic Spiro‐Type Molecules

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Cited by 30 publications
(29 citation statements)
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“…Indeed, 1 a the constituting building block of 1 c – g presents a first oxidation wave ${E{{1\hfill \atop {\rm ox}\hfill}}}$ at 1.47 V that is assigned to an indenofluorenyl electron transfer 26. On the other hand, literature reports for several molecules bearing the “aryl‐fluorene‐aryl” moieties such as 2,7‐bis‐(4‐ tert ‐butylphenyl)‐9,9′‐spirobifluorene38 and 2,2′,7,7′‐tetraphenyl‐9,9′‐spirobifluorene,39 a first oxidation potential ${E{{1\hfill \atop {\rm ox}\hfill}}}$ around 1.39 V vs SCE. It is hence difficult to assign the first electron transfer of 1 c – f since i) the indenofluorenyl core and the “aryl‐fluorene‐aryl” core are oxidized at similar potentials (1.47 vs 1.39 V, respectively) and ii) 1 c – f present a first oxidation potential ${E{{1\hfill \atop {\rm ox}\hfill}}}$ ranging from 1.28 to 1.45 V, depending on the substituents borne by the phenyl rings.…”
Section: Resultsmentioning
confidence: 99%
“…Indeed, 1 a the constituting building block of 1 c – g presents a first oxidation wave ${E{{1\hfill \atop {\rm ox}\hfill}}}$ at 1.47 V that is assigned to an indenofluorenyl electron transfer 26. On the other hand, literature reports for several molecules bearing the “aryl‐fluorene‐aryl” moieties such as 2,7‐bis‐(4‐ tert ‐butylphenyl)‐9,9′‐spirobifluorene38 and 2,2′,7,7′‐tetraphenyl‐9,9′‐spirobifluorene,39 a first oxidation potential ${E{{1\hfill \atop {\rm ox}\hfill}}}$ around 1.39 V vs SCE. It is hence difficult to assign the first electron transfer of 1 c – f since i) the indenofluorenyl core and the “aryl‐fluorene‐aryl” core are oxidized at similar potentials (1.47 vs 1.39 V, respectively) and ii) 1 c – f present a first oxidation potential ${E{{1\hfill \atop {\rm ox}\hfill}}}$ ranging from 1.28 to 1.45 V, depending on the substituents borne by the phenyl rings.…”
Section: Resultsmentioning
confidence: 99%
“…[16][17][18] To date, non-fullerene acceptor-based OSCs have been reported with higher PCEs than PC 61 BM/PC 71 BM-based devices. Materials based on SCPDT have been widely used in field-effect transistors, [30] dyesensitized solar cells, [31] andp erovskite solar cells. [5] Thus, developing new types of high-performance SM acceptors is highly desired.…”
mentioning
confidence: 99%
“…[5] Thus, developing new types of high-performance SM acceptors is highly desired. [30] Due to the well-conjugated structure and electron-rich property of two cyclopenta[2,1-b;3,4-b']dithiophene(CPDTs), [34] SCPDTbased molecules are expected to show strong intramolecular charge-transfer characteristics and thus broad low-energyo ptical transitionsa nd good charge mobility.U sing the simple solution spin-coating fabrication process, ah igh PCE of 7.11% was obtained when SCPDT-PDI 4 was used as the acceptor and poly [4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo [1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4b]thiophene-)-2-carboxylate-2-6-diyl)](PTB7-Th) was used as the donor.The chemical structures of SCPDT-PDI 4 and PTB7-Tha re shown in Figure 1a. [21][22][23][24] It has al arge p-conjugated molecular structure, strong light-absorption property,h igh electron mobility,a nd good chemical and optical stability.…”
mentioning
confidence: 99%
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