40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

Amamiya, Y.; Suzuki, Yoshishige; Kawanaka, M.; Hosoya, K.; Yamazaki, Z.; Mamada, M.; Takahashi, H.; Wada, S.; Kato, Tetsuya; Ikenaga, Yoshifumi; Tanaka, Shin‐ichi; Takeuchi, Tetsuya; Hida, H.

doi:10.1109/mwsym.2002.1011565

Cited by 15 publications

(4 citation statements)

References 6 publications

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“…22 Typical bias voltage and power consumption of the TIA were +5.2 V and 300 mW, respectively. The transimpedance gain was 42 dBΩ up to the 3-dB bandwidth of 37 GHz at the PD bias voltage of -4 V. Figure 5 shows bit-error-rate (BER) characteristics of the module at 40 Gbps and 43 Gbps under non-return-to-zero (NRZ) 2 23 -1 pseudo-random bit sequence (PRBS).…”

Section: Receiver Sensitivitymentioning

confidence: 99%

40-Gbps high-sensitive waveguide photodetectors

Torikai

Makita

2005

Optoelectronic Materials and Devices for Optical Communications

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Two types of waveguide photodiodes (WG-PD) -an evanescently coupled photodiode (EC-PD) and a separatedabsorption-and-multiplication avalanche photodiode (SAM-APD) -have been developed for use in 40-Gbps receivers. The EC-PD simultaneously exhibited high external responsivity of 0.96 A/W and wide bandwidth of >40 GHz. The SAM-APD showed wide bandwidth of 30-35 GHz and gain-bandwidth (GB) product of 140-180 GHz. High receiver sensitivities of -11.3 dBm at 43 Gbps and -19 dBm at 40 Gbps have been successfully achieved for the EC-PD and the SAM-APD, respectively.

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Section: Receiver Sensitivitymentioning

confidence: 99%

40-Gbps high-sensitive waveguide photodetectors

Torikai

Makita

2005

Optoelectronic Materials and Devices for Optical Communications

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“…In this work, the AlGaAs emitter layer was replaced by an InGaP layer to increase reliability. The transistors were characterized by a large-signal HBT model [1] incorporating self-heating and Kirk effects.…”

Section: Ingap-hbt Technologymentioning

confidence: 99%

“…We previously reported on analog and digital ICs (TIA, differential amplifier, and decision circuit) [1] for 40-Gbps systems using a matured GaAs-based InGaP HBT technology [2]. The first purpose of this paper is to develop other key ICs that utilize the microwave-circuit design techniques or configurations, i.e., a distributed amplifier, an analog phase shifter, clock (CLK) amplifiers for these systems, based on the same HBT technology.…”

Section: Introductionmentioning

confidence: 99%

An InGaP-HBT IC Chipset for 40-Gbps Optical-transmission Systems on the Basis of a Microwave-circuit Design Scheme

Hosoya

Suzuki

Amamiya

et al. 2003

33rd European Microwave Conference, 2003

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An InGaP-HBT IC chipset for 40-Gbps optical-transmission systems was developed on the basis of a microwave-circuit design scheme    design techniques, circuit configurations, and concepts. A distributed amplifier achieved ≥ ≥ ≥ ≥50-GHz bandwidth and ≥ ≥ ≥ ≥164-GHz gainbandwidth product, which are state-of-the-art values for GaAs-HBT-based baseband distributed amplifiers. A compact 40-GHz analog phase shifter with small insertionloss variation, and 20-GHz/40-GHz clock amplifiers with very low power consumption (about 10 mW) were also realized. Moreover, a new approach    inserting impedancetransformer circuits    to enable 'impedance matching' in high-speed digital ICs was successfully applied to a 40-Gbps decision circuit to prevent unwanted gain peaking and jitter increase caused by transmission lines without sacrificing chip size.

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“…The fabrication of high performance TIAs has been demonstrated in CMOS and in many III/V technologies including GaAs HBTs, InP HBTs, and InP HEMTs [2]- [6]. HBT ICs have complexity sufficient for the integration of additional receiver circuit components [7]. This makes this technology attractiv for high speed communications.…”

Section: Introductionmentioning

confidence: 99%

110+ GHz Transimpedance Amplifier in InP-HBT Technology for 100 Gbit Ethernet

Fields

Tsen

McGuire

et al. 2010

IEEE Microw. Wireless Compon. Lett.

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A 50 dB-transimpedance amplifier (TIA) with a bandwidth greater than 110 GHz has been demonstrated using InP HBT technology. The wide-band amplifier with a cuto frequency 110 GHz was designed and fabricated in HRL Laboratories' G4 0.25 m InP HBT IC technology. The amplifier operates at 4 0 V with a current draw of 76 mA for a power consumption of 304 mW. The basic Cherry-Hooper gain cell is used with a single-ended input and a differential output buffer stage. Index Terms-High-speed integrated circuits, indium phosphide (InP), monolithic microwave integrated circuit (MMIC), transimpedance amplifier (TIA).

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40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

Cited by 15 publications

References 6 publications

40-Gbps high-sensitive waveguide photodetectors

40-Gbps high-sensitive waveguide photodetectors

An InGaP-HBT IC Chipset for 40-Gbps Optical-transmission Systems on the Basis of a Microwave-circuit Design Scheme

110+ GHz Transimpedance Amplifier in InP-HBT Technology for 100 Gbit Ethernet

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