40 Gbit/s/ch 2×2 switch IC using InP HEMTs

DC to 50 GHz single-pole four-throw InP-HEMT switch IC with highly uniform performance

“…Introduction: A single-pole n-throw (SPnT) switch using cold FETs [1][2][3][4][5] is very attractive for wireless and measurement systems because of its virtually zero power dissipation and fast switching. For boosting the bandwidth and/or port count of the cold-FET switch, the InP HEMT [6] is very attractive since its ON-resistance (Ron) OFF-capacitance (Coff) product is much lower than that of GaAs-and Si-based FETs.…”