40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors

Wu, Chung-Hung; Sovero, E.A.; Massey, B.

doi:10.1109/jssc.2003.815927

“…Several TIA topologies are reviewed in [20]. TIAs appear frequently in optical communications literature [21,22] and physical measurement applications in single ended [16,[23][24][25][26][27] and differential forms [28].…”

Section: Transimpedance Amplifiermentioning

confidence: 99%

A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

Green

¹

,

David

²

,

Tozer

³

2012

Meas. Sci. Technol.

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This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately.

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Heterojunction Bipolar Transistor

Prasad

¹

2005

Encyclopedia of RF and Microwave Engineering

0

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The major advances in heterojunction bipolar transistor (HBT) technology since the mid‐1980s is covered in this article. The cutoff frequency ( f T ) and the maximum oscillation frequency ( f max ) have reached record highs. Indium phosphide (InP) HBTs have shown ( f T ) and ( f max ) in excess of 450 GHz and gate delays of 1.95 ps. Silicon–germanium (SiGe) HBTs have demonstrated 350 GHz ( f T ) and gate delays of 3.6 ps. The improved performance of the devices has resulted in impressive circuit results. Static frequency dividers operating at 152 GHz has been reported in InP HBT technology. SiGe HBT technology has demonstrated dynamic frequency dividers running at 110 GHz. Multiplexer/demultiplexer (MUX/DMUX) circuits operating at 40 Gbps (gigabits per second) were demonstrated with InP HBTs. On the other hand, 50‐Gbps 4–1 MUX/DMUX circuits have been shown with SiGe HBTs.

show abstract

Heterojunction Bipolar Transistor

Prasad

2005

Encyclopedia of RF and Microwave Engineering

0

View full text Add to dashboard Cite

The major advances in heterojunction bipolar transistor (HBT) technology since the mid‐1980s is covered in this article. The cutoff frequency ( f T ) and the maximum oscillation frequency ( f max ) have reached record highs. Indium phosphide (InP) HBTs have shown ( f T ) and ( f max ) in excess of 450 GHz and gate delays of 1.95 ps. Silicon–germanium (SiGe) HBTs have demonstrated 350 GHz ( f T ) and gate delays of 3.6 ps. The improved performance of the devices has resulted in impressive circuit results. Static frequency dividers operating at 152 GHz has been reported in InP HBT technology. SiGe HBT technology has demonstrated dynamic frequency dividers running at 110 GHz. Multiplexer/demultiplexer (MUX/DMUX) circuits operating at 40 Gbps (gigabits per second) were demonstrated with InP HBTs. On the other hand, 50‐Gbps 4–1 MUX/DMUX circuits have been shown with SiGe HBTs.

show abstract

40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors

Cited by 34 publications

References 11 publications

A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

Heterojunction Bipolar Transistor

Heterojunction Bipolar Transistor

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