40 ns pulsed I/V set-up and measurement method applied to InP HBT characterization and electro-thermal modeling

Abstract

-This paper presents a novel pulsed I/V measurement methodology applied to HBTs characterization using very narrow 40 ns pulse widths. The measurement procedure consists in applying pulsed collector emitter voltages while driving the transistor base with constant DC currents. The proposed measurement technique is applied here to the characterization and electro-thermal modeling of InGaAs/InP DHBTs from Alcatel Thales III-V Lab. By monitoring pulse widths from 400 ns down to 40 ns, non isothermal, quasi isothermal and isothermal behaviors of transistors are observed respectively. Measurements and simulations are then done to study electro-thermal effects in bipolar current mirrors.

Pulsed I(V) — pulsed RF measurement system for microwave device characterization with 80ns/45GHz

“…Measurements with pulse widths down to 80 ns are shown for DC and 150 ns for RF in a broad frequency range (500 MHz -45 GHz) with current resolution in the µA range. These performances are beyond those of the measurement systems in [4][5][6]. In Section II, a detailed description of the pulse system is given including the general principle, the experimental setup and the related measurement procedure.…”

Design and analysis of ultra-broadband distributed power amplifiers for multi-platform communications

“…Wide range of pulse widths, from millisecond to sub-nanosecond, is used in characterization for different applications. [98] report that self-heating effect is still significant, even when the pulse width used to characterize the transistor is reduced to hundreds of nano-second. Isothermal behaviors of the transistor are observed when the pulse width is 40ns.…”

“…The impact ionization effect, the safe operation area beyond fly-back and the performance of high power amplifier are characterized without being complicated by the self-heating effect[99]. Without self-heating, high current and high voltage characteristics are governed by Kirk effect and impact ionization[99] [98,99]…”