40 W Ka-Band Single and Dual Output GaN MMIC Power Amplifiers on SiC

Roberg, Michael; Kywe, Thi Ri Mya; Irvine, Matthew; Marrufo, O.; Nayak, Sabyasachi

doi:10.1109/bcicts.2018.8551075

Cited by 26 publications

(12 citation statements)

References 9 publications

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“…The PA achieves 45 dBm between 26 and 30 GHz, with a PAE higher than 30% and a small-signal gain around 20 dB [23]. The highest power achieved in GaN is in excess of 46 dBm [101], with similar gain and slightly lower PAE over the same bandwidth. In less than 10 years GaN filled the technological gap with respect to GaAs.…”

Section: A Standard Pasmentioning

confidence: 94%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: A Standard Pasmentioning

confidence: 94%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…With over 46 dBm, the highest output power was reported by Din et al [2] and Roberg et al [3]. Both of these HPAs utilize the highest drain voltage in the set (V D = 28 V).…”

Section: State Of the Artmentioning

confidence: 95%

“…By integrating the area under the curves from Fig. 3 as specified in (1) and 3, we can quantify how close the networks come to the theoretical optimum case, which is given by the right-hand side of (1) and (3). We define the ratio of these experimental values to the Bode-Fano limit as f BF,ds and f BF,gs…”

Section: Theoretical Matching Boundarymentioning

confidence: 99%

“…The vertical lines represent the band of interest. The entire area under the S 11 -curve counts toward the integrals of (1) and (3). Therefore, the area outside the band of interest (shown hatched) limits the achievable in-band RL.…”

Section: Interstage Matching Topologymentioning

confidence: 99%

“…These issues-especially the last pointcan be improved upon considerably using III-V semiconductors, such as gallium arsenide or gallium nitride (GaN). In the Ka-band , research toward higher power GaN high-power amplifiers (HPAs) recently produced publications demonstrating up to 40 W of output power [2], [3] on a single monolithic microwave integrated circuit (MMIC). High-power and high-efficiency designs typically utilize a reactive matching network to obtain a large-signal impedance match of the high-electron-mobility transistors (HEMTs) employed in the circuit.…”

Section: Introductionmentioning

confidence: 99%

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Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

Neininger

John

Thome

et al. 2021

IEEE Trans. Microwave Theory Techn.

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In this article, we summarize the theoretical matching boundaries and show the limitations they implicate for real-world amplifier design. Starting with a common schematic prototype, we investigate the question of how to realize its electrical response in a densely routed, massively parallelized layout. To that end, we develop a comprehensive study on the application of space-mapping techniques toward the design of high-power amplifiers (HPAs). We derive three reference design procedures and compare their performance in terms of convergence, speed, and practicality when laying out a densely routed HPA interstage matching network. Subsequently, we demonstrate the usefulness of the study by designing the networks of a compact three-stage eight-way wideband HPA in the Ka-band. The processed monolithic microwave integrated circuit features a 1-dB large-signal bandwidth of more than 11 GHz (a fractional bandwidth of 32.8%) and thus covers most of the Ka-band with an output power exceeding 6 W in 3 dB of gain compression. This demonstrates the highest combination of power and bandwidth to date using a reactively matched topology in the Ka-band.

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A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

Zhao

Zhu

Xia

et al. 2023

Circuit Theory & Apps

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SummaryThis paper presents a broadband monolithic millimeter‐wave integrated circuit GaN power amplifier (PA) with arbitrary two‐port complex‐impedance matching method. The proposed matching topology has been applied to interstage matching network design by modifying traditional coupling matrix and synthesizing a desired network. The optimum load traction technique is introduced to provide some more suitable Zopts. After continuous‐wave test, the three‐stage MMIC PA achieves a peak PAE of 39.1% with a 34.9 dBm output power from 23 to 29.5 GHz and the measured S21 is 32.5 dB with a ±2.5 dB gain variation. When driven by a 400 MHz OFDM modulation signal with a PAPR of 8.5 dB, the measured ACPR is improved to −40.6/−40.7 dBc with DPD. In this case, the PA achieves an average PAE of 11.7% and a 26.7 dBm average output power.

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40 W Ka-Band Single and Dual Output GaN MMIC Power Amplifiers on SiC

Cited by 26 publications

References 9 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

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