400 Gb/s O-band silicon photonic transmitter for intra-datacenter optical interconnects

A 400 Gb/s O-band WDM (8×50 Gb/s) Silicon Photonic Ring Modulator-based Transceiver

“…The dominance, however, of the O-band spectral window in the high-speed DC interconnect segment, has shifted research efforts towards O-band Txs [6]- [11], with ,higher than 25 Gb/s, demonstrations focusing either on single-lane transmitter layouts [6]- [9] or on multi-channel setups [10]. All of them have been, however, implemented as standalone photonic chips, without being yet incorporated into photonic/electronic co-packaged subassemblies.…”

“…All of them have been, however, implemented as standalone photonic chips, without being yet incorporated into photonic/electronic co-packaged subassemblies. More specifically, travelling wave Mach Zehnder modulator (MZM) arrays have been recently shown to perform at up to 400G aggregate date rates [10] when operating as standalone Si-Pho chips, requiring additional effort towards bringing them into a Tx subassembly that can reliably ensure the inpackage high-frequency electronics for successfully driving the MZM optics. On the other hand, Si-based ring modulator (RM) counterparts are well-known to offer significant footprint and energy consumption benefits compared to MZM-based arrangements [6]- [9], but these have been only recently validated in O-band Tx subassemblies employing just a single channel layout at >=50 Gb/s operation [8], [12].…”

Theoretical and numerical analyses for PDM-IM signals using Stokes vector receivers

“…Recently, most popular Internet applications operate in a datacenter infrastructure, including cloud computing, storage, the Internet of Things (IoT), and other advanced applications. Datacenter networks, including intra-and inter-datacenter transmissions, typically range from a few meters to a few tens of kilometers [1][2][3]. Unlike traditional long-haul transmission, polarization division multiplexing with coherent detection (PDM-CO) schemes provides 4 degrees (4D) of freedom, including optical intensity, phase, and polarization.…”

C-Band and O-Band Silicon Photonic Based Low-Power Variable Optical Attenuators

“…The SiP platform has the potential to build compact, high yield, high performance, and low cost complementary metal oxide semiconductor (CMOS) compatible devices [1]. In the last few years, different SiP designs have been demonstrated ranging from device level demonstrations, e.g., beam splitters [2], [3], polarization beam splitters (PBSs) [4], [5], traveling wave Mach-Zehnder modulators (TWMZMs) [6], [7], to system level demonstrations, e.g., 100 Gb/s and 400 Gb/s transceivers [8], [9], and coherent transceivers [10], [11].…”