400Gbps Fully Integrated DR4 Silicon Photonics Transmitter for Data Center Applications

Abstract

A 400Gbps PAM-4 fully integrated DR4 silicon photonics transmitter with four heterogeneously integrated DFB lasers has been demonstrated for data center applications over a temperature range of 0~70°C and a reach of up to 2km

2.5D Heterogeneous Integration for Silicon Photonics Engines in Optical Transceivers

“…Heterogeneous integration differs from monolithic in a significant aspect that it integrates components from different foundry technology platforms, usually post fabrication, using physical attach processes [3]. Heterogeneous integration also refers to cases where different material systems, are physically bonded to a common substrate and processed together to form the final component [4]. In this paper, we will focus on the former.…”

“…In silicon photonics, photodetectors are built from Ge grown on the Si substrate. The optical sources are either heterogeneously attached InP DFB lasers [3] or DFB lasers processed on the silicon platform, from heterogeneously attached InP epitaxial material [4,9]. Although there are multiple approaches to package integration [6,10], the method we have described here uses the silicon photonics device as an interposer, with TSV's.…”

Silicon photonics for terabit/s communication in data centers and exascale computers

“…This includes Ethernet 100 Gbps transceivers using 4+4 optical ports carrying 25 Gbps OOK-NRZ modulated data streams [53 ,54] or WDM based modules at 12.5 Gbps per channel [55] or 25 Gbps per channel [56,57]. More recently, 400 Gbps transceivers have been demonstrated , using 56 GBd PAM-4 modulation combined with 4 lanes SDM, announcing the next generation of Silicon Photonics based transceiver products [58] For Inter Data Center Interconnects , typically using DP-QPSK modulation formats, 100Gbps coherent transmissions have been demonstrated [59] and are now in production.…”

Modeling of a SiGeSn quantum well laser

“…Despite the fast progress made in silicon photonics (SiP), with silicon (Si) waveguide-based devices [1], electro-optic modulators [2], and germanium (Ge) photodetectors [3] made by complementary metal oxide semiconductor (CMOS) compatible fabrication, direct epitaxial integration of an efficient light source on Si remains a challenging goal. Commercialized SiP products rely on either hybrid or heterogeneous integration of III-V lasers, wherein a laser is packaged in either an optical micro-bench and subsequently attached to the chip [4] or an indium phosphide (InP) gain material wafer-bonded and subsequently processed at the wafer scale [5]. Direct growth of III-V gain materials on a Si substrate is challenging due to substantial lattice mismatch as well as the formation of anti-phase domains.…”