42‐1: Development of Cu BCE‐Structure IGZO TFT for a High‐ppi 31‐in. 8K × 4K GOA LCD

Ge, Shi-Min; Li, Shan; Chen, Shujhih; Kong, Xiang-Yong; Meng, Yingchao; Shen, Weixiang; Shi, Long-Qiang; Wu, Wei; Liu, X; Gan, Qi-Ming; Zhao, Yang; Zhang, CK; Chiu, Chung‐Yi; Lee, Chia-Yu

doi:10.1002/sdtp.11705

Cited by 18 publications

(9 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…IGZO TFTs have the advantages of high mobility, a reasonable on/off ratio, high optical transparency in the visible region and a large area of deposition at low temperatures [ 8 , 9 ]. Although high-definition displays and foldable displays using IGZO TFTs have been made [ 10 , 11 ], the property stability and mass production techniques are still the main obstacles to IGZO TFTs replacing Si-based TFTs commercially. Meanwhile, in the development of large, high frequency, high resolution and low power flat panel displays for the next generation, the signal delay and aperture ratio of the gate lines and data lines are main constraints.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Properties of Crystalline IGZO Thin Films

Wang

Shen

et al. 2021

Membranes

View full text Add to dashboard Cite

IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors’ (TFTs) use in commercial products. In this paper, we prepared a c-axis crystallized IGZO thin film by Radio Frequency (RF) sputtering at 180 °C, with a 50% O2 ratio and 110 W power. XRD images show that the crystallized film has an obvious diffraction peak near 31°, and the spacing between the crystal surfaces was calculated to be ≈0.29 nm. The HRTEM map confirmed the above results. The stability of IGZO thin films was investigated by etching them with an acid solution. The crystalline IGZO films exhibited better acid corrosion resistance, and their anticorrosion performance was 74% higher than that of amorphous IGZO (a-IGZO) films, indicating the crystalline IGZO film can provide more stable performance in applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation and Properties of Crystalline IGZO Thin Films

Wang

Shen

et al. 2021

Membranes

View full text Add to dashboard Cite

show abstract

“…In our previous work, BCE a-IGZO TFT with a dense passivation layer by adjusting the N 2 O/SiH 4 ratio and reducing deposit rate during the PECVD process showed good environment stability [3]. In this work, we continued to examine the effect of the deposit rate during the PV1 PECVD process on the electrical characteristics of BCEstructure IGZO TFTs.…”

Section: Modifying the Passivation Layermentioning

confidence: 92%

P‐6.6: Fabrication of Cu BCE‐structure IGZO TFTs for 85‐inch 8K4K 120Hz GOA LCD Display

Wang¹,

Ge²,

Li³

et al. 2018

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

The electrical characteristics of the back‐channel‐etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a‐IGZO) thin‐film transistors (TFTs) were studied. The passivation layer ,the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H2O molecules adsorbing on the back channel of the BCE‐structure. The negative and positive bias temperature stress results revealed that the optimized GOA TFTs exhibited good device reliability. Finally, a high performance 85‐inch 8K4K 120Hz GOA LCD was demonstrated.

show abstract

“…The comparison between the TFTs with and without polymer film on array (PFA) shows that the PFA is responsible for the abnormal hump. The PFA is used as the planarization for pixel electrodes and reduces the parasitic capacitance between gate bus lines and pixel electrodes [23]. The dependence of channel width and channel length on humps is also investigated.…”

Section: Introductionmentioning

confidence: 99%

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

Lee

Chiu

et al. 2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

The mobility enhancement and the positive bias stress of top-gate self-aligned TFTs using the a-IGZO channel with a front barrier are investigated. The a-IGZO front barrier can keep electrons in the a-IGZO channel away from the top-gate oxide to significantly enhance the electron mobility at the top gate operation. The parasitic channel induces a hump in the transfer characteristics. The positive bias stress shifts the hump to the negative voltage abnormally. The H 2 O in the polymer film on array layer is responsible for the abnormal shift. The H 2 O diffuses into the top-gate insulator and is electrolyzed to create H + , which forms a parasitic channel with a negative shift of threshold voltage, leading to the abnormal hump. The abnormal humps are increasingly significant with the increasing channel width and the decreasing channel length. The channel width dependence on positive bias stress is due to the inverse narrow width effect caused by the fringe electric field. The channel length dependence on positive bias stress is due to the H + diffusion toward the center of the parasitic channel from both the source and drain sides.INDEX TERMS Positive bias stress (PBS), a-IGZO, hump, polymer film on array (PFA).

show abstract

42‐1: Development of Cu BCE‐Structure IGZO TFT for a High‐ppi 31‐in. 8K × 4K GOA LCD

Cited by 18 publications

References 7 publications

Preparation and Properties of Crystalline IGZO Thin Films

Preparation and Properties of Crystalline IGZO Thin Films

P‐6.6: Fabrication of Cu BCE‐structure IGZO TFTs for 85‐inch 8K4K 120Hz GOA LCD Display

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

Contact Info

Product

Resources

About