42‐4: Late‐News Paper: A Radiation‐Hardened Oxide TFT with a Multi‐Layered Gate Dielectric

Abstract

We propose an IGZO thin‐film transistor (TFT) with a multi‐layered gate dielectric for X‐ray flat‐panel detectors (FPDs). By minimizing X‐ray effects on the gate insulator and threshold‐voltage shift in the IGZO layer, we achieve high radiation hardness. These TFTs in FPD are ideal for medical imaging and nondestructive inspection.