This paper presents the design and development of a MMIC based broadband low noise amplifier using a GaAs based pHEMT of 0.15 μm gate length. A 3 stage cascaded amplifier configuration has been chosen for the design. Series inductive feedback and RLC feedback have been used simultaneously in order to achieve improved stability and gain flatness over the required bandwidth. The design, simulation and optimization are carried out using Agilent's Advanced Design System (ADS). A gain of 15.8+2dB and a maximum noise figure of 3.9 dB over a frequency band of 18-40 GHz have been achieved. The amplifier finds its application in Millimeter wave Imaging, Surveillance System, Wide-Band and UWB Radar, Space and TestInstrumentation.