2019
DOI: 10.1109/ted.2019.2891414
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43- and 50-Mp High-Performance Interline CCD Image Sensors

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Cited by 3 publications
(1 citation statement)
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“…Optimizations for P-N junctions can effectively reduce charge diffusion in the p-well below the photodiode [11], [12], [13], [14]. Moreover, double layer design and material replacement of the light shield can further avoid light penetration [7], [8], [15], [16]. Furthermore, the optimization of on-chip lenses used to guide light onto photodiodes was reported, which controls light leakage [17].…”
mentioning
confidence: 99%
“…Optimizations for P-N junctions can effectively reduce charge diffusion in the p-well below the photodiode [11], [12], [13], [14]. Moreover, double layer design and material replacement of the light shield can further avoid light penetration [7], [8], [15], [16]. Furthermore, the optimization of on-chip lenses used to guide light onto photodiodes was reported, which controls light leakage [17].…”
mentioning
confidence: 99%