46‐4: High Frame Rate Scanning Backlight System For Gaming PC Display with IGZO‐TFT Technology

Kobayashi, Masamitsu; Miura, Takahiro; Yamaguchi, Noriaki; Miyata, Hidekazu; Yashiki, Masafumi; Masuda, Junichi; Takase, Kenji; Hara, Yoshihito; Kikuchi, Tetsuo; Imai, H.

doi:10.1002/sdtp.14762

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…Impulse-type backlights such as flashing backlights and scanning backlights are known to have different moving picture quality depending on the position on the screen [11][12][13].…”

Section: Crosstalk Simulation Systemmentioning

confidence: 99%

62‐2: High Frame Rate Scanning Backlight System for Privacy Display with Active Retarder

Kobayashi,

Miura,

Yamaguchi

et al. 2024

Symp Digest of Tech Papers

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“…Impulse-type backlights such as flashing backlights and scanning backlights are known to have different moving picture quality depending on the position on the screen [11][12][13].…”

Section: Crosstalk Simulation Systemmentioning

confidence: 99%

62‐2: High Frame Rate Scanning Backlight System for Privacy Display with Active Retarder

Kobayashi,

Miura,

Yamaguchi

et al. 2024

Symp Digest of Tech Papers

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“…Recently, demand for higher field-effect mobility (μ FE ) and smaller pixel size has grown as part of efforts to develop next-generation displays with ultrahigh resolution beyond 8 K, a refresh rate greater than 240 Hz, and a pixel density above 1000 pixels per inch. Organic light-emitting diode (OLED) technology, which is dominating the high-end display market, requires a relatively high current density of several microamperes due to the current-driving method of light-emitting devices, unlike that of voltage-driven liquid crystal displays. − It is therefore important to precisely understand the self-heating effects in TFTs. Amorphous indium-gallium-zinc oxide ( a -IGZO) is a promising channel material that has been implemented in display backplanes since its invention by Hosono and co-workers in 2004 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Kim

Lee

Kim

et al. 2023

ACS Appl. Electron. Mater.

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Here, we investigate the effect of increasing temperature on threshold voltage (V TH ) stability in self-aligned coplanar amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). An analytical model of the temperature dependency of V TH stability reveals the importance of device geometry and subgap density-of-state (DOS) reductions in highly stable a-IZTO TFTs. The validity of the analytical model is confirmed using experiments and technology computer-aided design simulations to predict quantitative relationships under various shifts in temperatures, subgap DOS, and V TH . The role of hydrogen impurity in performance and V TH stability is also examined. The incorporation of hydrogen in a-IZTO channels improves TFT performance and thermal stability (ΔV TH /ΔT = 3.18 mV/K) due to hydrogen's role as a passivation center. However, excessive incorporation of hydrogen increases subgap DOS distribution, causing a slight deterioration in thermal stability (ΔV TH /ΔT = 3.31 mV/K). This suggests that hydrogen can be converted from a shallow donor to an acceptor-like deep trap state. Our findings inform future designs of stable oxide semiconductor TFTs in terms of thermal stability in emerging organic light-emitting diode, augmented and virtual reality, memory, logic, and monolithic three-dimensional applications.

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Growth of Highly‐Ordered‐Crystalline Indium‐Gallium‐Oxide Thin‐Film via Plasma‐Enhanced ALD for High Performance Top‐Gate Field‐Effect Transistors

Kim,

Bang,

Hur

et al. 2024

Small Methods

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This study introduces a novel method for achieving highly ordered‐crystalline In2‐xGaxO3 [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma‐enhanced atomic‐layer‐deposition (PEALD) with dual seed crystal layers (SCLs) of γ‐Al2O3 and ZnO. Field‐effect transistors (FETs) with random polycrystalline In2‐xGaxO3 channels (grown without SCLs) show a mobility (µFE) of 85.1 cm2 V−1s−1, attributed to high indium content. In contrast, FETs with highly ordered In2‐xGaxO3 grown via SCLs exhibit superior performance, with µFE reaching 95.5 cm2 VV−1s−1 and enhanced reliability due to the uniform growth of high‐quality bixbyite films. The role of γ‐Al2O3 and ZnO SCLs in enabling this growth and the correlation between cation composition, crystalline structure, and electrical properties are comprehensively analyzed. This approach provides new insights into the high‐quality bixbyite In2‐xGaxO3 system, offering an alternative to conventional amorphous or polycrystalline structures. The highly ordered crystalline structure paves the way for advanced applications in 3D heterogeneous semiconductor chips, expanding beyond displays to include memory, logic, and artificial intelligence devices.

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46‐4: High Frame Rate Scanning Backlight System For Gaming PC Display with IGZO‐TFT Technology

Cited by 4 publications

References 13 publications

62‐2: High Frame Rate Scanning Backlight System for Privacy Display with Active Retarder

62‐2: High Frame Rate Scanning Backlight System for Privacy Display with Active Retarder

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Growth of Highly‐Ordered‐Crystalline Indium‐Gallium‐Oxide Thin‐Film via Plasma‐Enhanced ALD for High Performance Top‐Gate Field‐Effect Transistors

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