47‐3: Invited Paper: High Brightness and RGB Integration of Eu‐doped GaN‐based Red LEDs for Ultrahigh‐resolution Micro‐LED Display

Abstract

A nitride‐based ultra‐small‐size, full‐color, and high‐resolution micro‐LED display is one of key devices for “a smart society”. The ongoing search for an efficient red LED based on GaN is pivotal to the realization of the display. We have worked on the development of semiconductors intracenter photonics. This novel photonics uses the intra‐4f shell transitions of rare‐earth ions doped in semiconductors. In 2009, we invented a narrow‐band red LED using Eu‐doped GaN (GaN:Eu). By continued optimization of the device processing, the output power of the LED is approaching the practical stage. Furthermore, the red LED can be integrated monolithically with conventional blue and green LEDs on the same sapphire substrate. Current status of the GaN:Eu LED and strategies toward further enhancement of its output power using the control of photon fields are reported.