48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

Abstract

This paper details the low temperature poly‐crystalline silicon oxide (LTPO) thin‐film transistor (TFT) technology development primarily focused on image sticking (IS) and recovery behaviors, the backplane process optimization, which is painstaking multi‐faceted approach from TFT to panel to circuit, in order to ensure display performance and reliability. Palpable understanding on light induced IS and recovery, the dependency of bias layout design and backplane process integration are crucial.

P‐6.14: Improvement of Image Sticking Performance in AMOLED Display by Extending Scan Pulse Width via a Novel Driving Circuit

“…Previous reports suggested a variety of methods to promote image sticking performance [1][2][3][4][5][6][7]. On the one hand, backplane fabrication process has significant effect on the formation of bulk and interfacial defects of thin films, thus dominates hysteresis and bias stress stability of thin-film transistor (TFT) device characteristics.…”

Advances in mobility enhancement of ITZO thin-film transistors: a review

“…Therefore, a more advanced TFT technology is needed to meet these demands for performance and environmental protection. Samsung developed low-temperature polycrystalline oxide (LTPO) technology in 2018 to create a more power-efficient display [30] . This technology utilizes a-IGZO TFTs as switch devices for pixels, while low-temperature poly-Si TFTs act as driver devices for LED pixels to overcome the problem of leakage current in low-temperature poly-Si TFTs [31] .…”