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Abstract

In this paper we investigated the effect of tunneling magnetoresistance in one-dimensional three-terminal mesoscopic ring in the presence of the magnetic flux and the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We calculated the current flow in this structure based on the Landauer-Buttiker formalism and a generalized Green's function technique for parallel and antiparallel spin orientations in ferromagnetic electrodes. Calculations show that the tunneling magnetoresistance increases with the strength of the magnetization. The required conditions for reach the maximum values of the tunneling magnetoresistance are also calculated.Keywords: tunneling magnetoresistance, three-terminal mesoscopic ring, magnetoresistance, Rashba, Dresselhaus. IntroductionThe magnetic properties of nanoscale magnets and manipulation of electron spin degree of freedom have been the focus of intensive research in the past few decades for both fundamental physics and attractive potential applications [1,2]. During the rapid development of nanotechnology, much attention has been paid on the spin injection and the tunneling magnetoresistance (TMR) effect in tunnel junctions made of semiconductor spacers, sandwiched between ferromagnetic leads [3]. The magnetoresistance exhibits a strong dependence on the relative magnetization directions in these layers and on their spin polarizations [4][5][6][7][8]. Its new characteristics, for example, anomalies of the TMR caused by the intra-dot Coulomb repulsion energy, were analyzed in the subsequent theoretical work based on the non-equilibrium Green's function method [9]. Also, numerous investigations relate to the transmissions, conductances, and traversal times [10][11][12]. Spintronics devices based on the TMR effect in magnetic multi-layers, such as magnetic field sensor and magnetic hard disk read heads have been used as commercial products, and have greatly influenced the current electronic industry. Some successful attempts have been already made in this direction, based on the use of ferromagnetic metal or combined magnetic and non-magnetic semiconductor contacts [13]. In such devices based on the spin polarization of the current inject from the ferromagnetic leads which can be effectively tuned by the magnetic flux and the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit