4d photoabsorption in Sn III

Dunne, Padraig; O’Reilly, Fergal; O'Sullivan, Gerry; Murphy, Nicola

doi:10.1088/0953-4075/32/20/105

Cited by 15 publications

(24 citation statements)

References 12 publications

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“…Also, Multiconfigurational Dirac Hartree-Fock calculations were made by Curtis et al [12] for the same transitions. Calculations of oscillator strengths for 4d photoabsorption transitions were computed by Dunne et al [13] and Duffy et al [14] [5,7,[15][16][17][18][19]. A comparison between theoretical lifetimes deduced from our calculations and the experimental values available in the bibliography is also presented.…”

Section: Introductionmentioning

confidence: 94%

“…The basis set used in this work consists in 10 configurations of even parity, namely, 4d 10 Tables [20] although the two levels namely 3º and 4º of the 4d 10 5p5d configuration have been excluded from the fit. We have included the tree levels of 4d 5 5s 2 5p reported by Dunne et al [13]. Figure 1 displays a energy level diagram of the Sn III.…”

Section: Theoretical Calculationsmentioning

confidence: 99%

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Calculation of oscillator strengths, transition probabilities and radiative lifetimes of levels in Sn III

Colón¹,

Alonso‐Medina²

2010

J. Phys. B: At. Mol. Opt. Phys.

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Abstract. This paper contains the results of theoretical calculations of oscillator strengths and transition probabilities of 171 spectral lines arising from 4d 10 5sns (n=6-9), 4d 10 5snp (n=5,6), 4d 10 5p 2 , 4d 10 5snd(n=5-7), 4d 10 5s4f and 4d 10 5s5g configurations and 36 level radiative lifetimes of Sn III has been calculated. These values were obtained in intermediate coupling (IC) and using relativistic Hartree-Fock calculations including core-polarization effects in the potential and the corresponding corrections in the matrix elements. We use for the IC calculations the standard method of least square fitting from experimental energy levels by means of Cowan computer code. The inclusion in these calculations of the 4d 9 5s 2 5p has facilitated us a new assignment of the levels of energy in the Sn III. Transition probabilities, oscillator strengths and radiative lifetimes obtained are in good agreement with the experimental data.

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Section: Introductionmentioning

confidence: 94%

Section: Theoretical Calculationsmentioning

confidence: 99%

Calculation of oscillator strengths, transition probabilities and radiative lifetimes of levels in Sn III

Colón¹,

Alonso‐Medina²

2010

J. Phys. B: At. Mol. Opt. Phys.

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“…At a delay of 300 ns the plasma was dominated by Sn II and at a delay of 60 ns by Sn III and Sn IV ions which proved difficult to isolate. The identity of the absorbing species was achieved by comparison with 4d → np absorption from 4d 10 5s m 5p k ground configurations under identical experimental conditions [13][14][15][16] as shown in figure's 2, 3, and 4 below. …”

Section: Methodsmentioning

confidence: 99%

Photoabsorption spectra of a laser produced Sn plasma

et al. 2005

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The search for a source of EUV radiation for photolithography in the 13.5 nm region has been narrowed down to laser produced or pulsed discharge plasmas containing either xenon or tin. 1 Higher conversion efficiencies can however be obtained with tin based plasmas within this wavelength regime. 2 It is known that EUV photoabsorption by the lower ion stages of xenon reduces the photon flux from a xenon source. 3 This is due to shape resonances from 4d → f transitions within Xe I -IV. The corresponding resonances for Sn I -IV have been obtained by means of the dual laser plasma (DLP) technique. 4 It is also found that above the 4d ionisation threshold the spectra of Sn I -IV are dominated by a 4d → f shape resonance which peaks at close to 65 eV in each case. A transfer of oscillator strength from the shape resonance to pseudo-discrete 4d → nf transitions with increasing ionisation is clearly evident. Hartree Fock with configuration interaction and relativistic time dependent local density approximation calculations successfully account for this behaviour and also permit identification of the discrete features.

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“…At the 26.44 eV energy of the Ar X-ray laser line we estimate that f1 is -13, which makes the index of refraction larger than one. The most important contribution to f1 at this energy is from the 4d -5p lines at 26.72, 27.58, and 28.03 eV that have been measured experimentally [24]. For neutral Sn we extrapolate the Henke data to estimate that f1 is -1.79 at 26.44 eV.…”

Section: Tin and Xenon Plasmasmentioning

confidence: 95%

“…Looking at Sn +2 , we estimated the absorption coefficient by starting with the neutral absorption published in the Henke tables at higher energies and combining this with the measured photo-ionization edge at 30.3 eV, our multiconfiguration Dirac-Fock calculations for the low energy 5s -5p lines near 9 eV, and the measured 4d -5p lines near 27 eV [24]. Using the Kramers-Kronig dispersion relation we then determined the optical constant f1 versus photon energy, as shown in Fig.…”

Section: Tin and Xenon Plasmasmentioning

confidence: 99%

Understanding the dramatic role of anomalous dispersion on the measurement of electron densities in plasmas using interferometers

et al. 2005

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For decades the electron density of plasmas has been measured using optical interferometers. With the availability of good X-ray laser sources in the last decade interferometers have been extended into the wavelength range 14 -47 nm, which has enabled researchers to probe even higher density plasmas. The data analysis assumes the index of refraction is due only to the free electrons, which makes the index less than one. Recent interferometer experiments in Al plasmas observed plasmas with index of refraction greater than one at 14 nm and brought into question the validity of the usual formula for calculating the index. In this paper we show how the anomalous dispersion from bound electrons can dominate the free electron contribution to the index of refraction in many plasmas and make the index greater than one or enhance the contribution to the index such that one would greatly overestimate the density of the plasma using interferometers. Using a new average-atom code we calculate the index of refraction in many plasmas at different temperatures for photon energies from 0 to 100 eV and compare against calculations done with OPAL. We also present examples of other plasmas that may have index of refraction greater than one at X-ray laser energies. During the next decade X-ray free electron lasers and other X-ray sources will be available to probe a wider variety of plasmas at higher densities and shorter wavelengths so understanding the index of refraction in plasmas will be even more essential.

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4d photoabsorption in Sn III

Cited by 15 publications

References 12 publications

Calculation of oscillator strengths, transition probabilities and radiative lifetimes of levels in Sn III

Calculation of oscillator strengths, transition probabilities and radiative lifetimes of levels in Sn III

Photoabsorption spectra of a laser produced Sn plasma

Understanding the dramatic role of anomalous dispersion on the measurement of electron densities in plasmas using interferometers

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