Samples of the monolithic silicon pixel ASIC prototype
produced in 2022 within the framework of the Horizon 2020 MONOLITH
ERC Advanced project were irradiated with 70 MeV protons up to a
fluence of
1 ×
1016 neq/cm2, and then tested using a beam of
120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch
hexagonal pixels, read out by low noise and very fast frontend
electronics produced in a 130 nm SiGe BiCMOS technology process.
The dependence on the proton fluence of the efficiency and the time
resolution of this prototype was measured with the frontend
electronics operated at a power density between 0.13 and
0.9 W/cm2. The testbeam data show that the detection efficiency
of 99.96% measured at sensor bias voltage of 200 V before
irradiation becomes 96.2% after a fluence of
1 ×
1016 neq/cm2. An increase of the sensor bias
voltage to 300 V provides an efficiency to 99.7% at that proton
fluence. The timing resolution of 20 ps measured before
irradiation rises for a proton fluence of
1 ×
1016 neq/cm2 to 53 and 45 ps at HV = 200
and 300 V, respectively.