4f hybridization and band dispersion in gadolinium thin films and compounds

Komesu, Takashi; Jeong, Hae Kyung; Wooton, David L.; Losovyj, Yaroslav; Crain, Jason; Bissen, Mark; Himpsel, F. J.; Petrosky, James C.; Tang, Jinke; Wang, Wendong; Yakovkin, I.N.

doi:10.1002/pssb.200881553

Cited by 6 publications

(6 citation statements)

References 50 publications

(94 reference statements)

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“…[33][34][35]55 This contribution becomes evident at photon energies corresponding to the 4d → 4f super-Coster-Kronig resonance, 56 as in the case of 3% Gd-doped HfO 2 , 33,35,55 but with far less resonant enhancement in the case of Eu 0.96 Gd 0.04 O. Indeed, the Gd contribution to the bottom of the valence band, at photon energies off resonance in the case of Eu 0.96 Gd 0.04 O, is more difficult to discern.…”

Section: Valence-band Electronic Structurementioning

confidence: 99%

Effect of gadolinium doping on the electronic band structure of europium oxide

Santana

et al. 2012

Phys. Rev. B

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B.; Yakovkin, I. N.; and Dowben, Peter A., "Effect of gadolinium doping on the electronic band structure of europium oxide" (2012 [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements show an apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.

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Section: Valence-band Electronic Structurementioning

confidence: 99%

Effect of gadolinium doping on the electronic band structure of europium oxide

Santana

et al. 2012

Phys. Rev. B

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“…As in prior studies (Komesu et al, 2009, before the deposition, the Si(100) substrates were cleaned with diluted HF acid, rinsed with acetone, and then immediately put into a vacuum chamber. Before deposition, the surface of the Si wafer and the Mn doped Li 2 B 4 O 7 substrates were sputter cleaned in a plasma of H 2 (8%) and Ar (92%) mixture created by a DC sputtering gun operating in the reverse bias mode.…”

Section: Methodsmentioning

confidence: 99%

“…Thin-layer semiconducting gadolinium oxide diode heterostructures with silicon have, however, been fabricated ) with very strong (À402) texture growth of the Gd 2 O 3 (Komesu et al, 2009). The pulse collection following Gd neutron capture should produce a pulse height spectrum with features that are attributable to the Gd K-shell Auger electron resonances.…”

Section: Introductionmentioning

confidence: 99%

Gamma and X-ray sensitivity of Gd2O3 heterojunctions

Santana

Young

McClory

et al. 2013

Radiation Measurements

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Young, C M.; McClory, J W.; Petrosky, J C.; Wang, X; Liu, P; Tang, Jinke; Adamiv, V T.; Burak, Ya V.; Fukutani, Keisuke; and Dowben, Peter A., "Gamma and X-ray sensitivity of Gd 2 O 3 heterojunctions" (2013 b s t r a c tWe find that Gd 2 O 3 thin films strongly favor a (À402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.

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“…It is possible that to increase electron configuration stability, the trivalent RE ions of Sm 3+ through Dy 3+ have half filled or nearly half filled 4f -orbitals. The elements surrounding Gd 3+ would also have approximately seven 4f electrons if this is the case and be partially 5d hybridized [30,38].…”

Section: Physical Interpretation Of Lanthanide Eels Datamentioning

confidence: 99%

Comparative analysis for meaningful interpretation of rare-earth oxide M$_{4,5}$ energy loss edges

Kennedy,

Choi,

Scott

2021

Preprint

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The magnetic, electronic, and optical properties of rare earth-oxides are directly influenced by the valency of the metallic cation. With the development of next generation electron energy-loss spectrometers, high-energy lanthanide fine structure can be studied with improved signal-to-noise for quantitative analysis. Unfortunately, the behavior of rare-earth 4f orbital electrons is not well understood. To establish best practices for analysis of energy-loss spectra from lanthanide oxides, we have performed a comparative study of the four traditional white line analysis methods extended to lanthanide M 4,5 edges resulting from 3d→4f orbital transitions using data from Gatan's EELS Atlas. The M 4 /M 5 spectral feature ratios were examined as a function of 4f occupancy. The M 4 /M 5 spectral feature ratio decreases exponentially as 4f occupancy increases, except for a plateau between Sm 3+ and Dy 3+ . The full-width at half the maximum intensity of the M 4 edges shows increased broadening for Sm 3+ through Dy 3+ . We suggest that the plateau results from 4f-orbital half-filling and is explained through the relationship between electron transition probability and transition lifetime as expressed through Fermi's Golden Rule. Of the four spectral analysis methods described, only the integrated area method can be ascribed a quantitative physical interpretation.

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4f hybridization and band dispersion in gadolinium thin films and compounds

Cited by 6 publications

References 50 publications

Effect of gadolinium doping on the electronic band structure of europium oxide

Effect of gadolinium doping on the electronic band structure of europium oxide

Gamma and X-ray sensitivity of Gd2O3 heterojunctions

Comparative analysis for meaningful interpretation of rare-earth oxide M$_{4,5}$ energy loss edges

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