4H-SiC Diode with a RuOx and a RuWOx Schottky Contact Irradiated by Fast Electrons

Stuchlíková, Ł.; Harmatha, L.; Buc, D.; Benkovska, J.; Hlinka, B.; Siu, G. G.

doi:10.1109/asdam.2006.331187

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…15 Furthermore, Ru 2 Si 3 is semiconducting and has a barrier height close to that of Ru on SiC. The SBH of Ru 2 Si 3 on silicon (which one can conjecture to be close to that on SiC) of 0.76 eV 16 is very close to the SBH of Ru on SiC.…”

Section: Where V I Is the Voltage Intercept Andmentioning

confidence: 66%

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

et al. 2015

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Abstract. Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400 • C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800 • C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance-voltage characteristics and excellent forward current-voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium-silicon-carbide interface, up to an annealing temperature of 800 • C.

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Section: Where V I Is the Voltage Intercept Andmentioning

confidence: 66%

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

et al. 2015

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“…It is therefore important to study how the reaction and diffusion of ruthenium with SiC, affects the performance of Ru-6H-SiC diodes. However there is scant literature [3,4,5,6,7,8,9] on the solid state reaction of Ru with SiC, and its effect on the performance of Ruon-SiC based diodes .…”

Section: Introductionmentioning

confidence: 99%

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

et al. 2014

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Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonalsilicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru 2 Si 3 ) at 800 o C,while diffusion of Ru into 6H-SiC commenced at 800 o C . Raman analysis of the thin films annealed at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.

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Investigation of the structural and electrical properties of air-annealed ruthenium thin films on 6H–SiC at different temperatures

Munthali

2018

Chinese Journal of Physics

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4H-SiC Diode with a RuOx and a RuWOx Schottky Contact Irradiated by Fast Electrons

Cited by 3 publications

References 8 publications

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Investigation of the structural and electrical properties of air-annealed ruthenium thin films on 6H–SiC at different temperatures

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