5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Elahipanah, Hossein; Salemi, Arash; Zetterling, Carl-Mikael; Östling, Mikael

doi:10.1109/led.2014.2386317

Cited by 29 publications

(13 citation statements)

References 15 publications

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“…This might be attributed to the immediate expansion of the Ni layer surrounded by oxide sidewalls during the RTA process. The annealing process affects the quality of oxide which could be a passivation layer of BJTs, 3,4 gate oxide of MOSFETs, 11,12 side-wall oxide of JFETs and trench devices, 13 etc. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4] The self-aligned silicide process (Salicide) has been developed in Si technology for many years. 5,6 The two-step annealing silicide process has been widely known and used in silicon CMOS technology since the 1980s.…”

mentioning

confidence: 99%

“…Silicon carbide (SiC) is a well-known wide bandgap semiconductor for high temperature and high power applications due to its unique electrical and physical properties. [1][2][3][4] The self-aligned silicide process (Salicide) has been developed in Si technology for many years. 5,6 The two-step annealing silicide process has been widely known and used in silicon CMOS technology since the 1980s.…”

mentioning

confidence: 99%

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A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

Elahipanah

Asadollahi

Ekström

et al. 2017

ECS J. Solid State Sci. Technol.

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A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10 −6 · cm 2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

Elahipanah

Asadollahi

Ekström

et al. 2017

ECS J. Solid State Sci. Technol.

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“…The final collector mesa to the p-isolation layer was formed to separate the on-wafer devices from each other. The etching uniformity of ±7% was achieved by controlled SiC dry etching [11], [12]. Improving the surface morphology after dry etching and surface passivation minimizes the surface recombination and significantly increase the current gain.…”

Section: A Device Fabricationmentioning

confidence: 99%

An Intermediate Frequency Amplifier for High-Temperature Applications

Hussain

Elahipanah

Schröder

et al. 2018

IEEE Trans. Electron Devices

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This paper presents a two-stage small signal intermediate frequency (IF) amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide (SiC) bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 • C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature which decreases gradually to 16 dB at 251 • C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 dB and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

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“…Therefore, it is very important to optimize the surface electric field (E-field) of AlGaN/GaN devices. The edge termination techniques [18][19][20][21][22][23][24][25] are widely used to prevent the lateral power semiconductor devices from premature breakdown. Among them, the multi-trench structure [18][19][20][21][22][23] has become an effective edge termination method for smoothing the E-field due to its easy design and fabrication.…”

mentioning

confidence: 99%

A variable nanotrench structure for electric field modulation in AlGaN/GaN devices

Zhang¹,

Zhou²,

Yang³

et al. 2019

Jpn. J. Appl. Phys.

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The surface electric field (E-field) optimization of AlGaN/GaN devices is very important because the two-dimensional electron gas channel is extremely close to the surface. In this work, a novel variable nanotrench (VNT) structure for E-field modulation in AlGaN/GaN devices is proposed and demonstrated. The effectiveness of the VNT-structure in optimizing the surface E-field is investigated by the technology computer aided design simulation. Single step dry etching is developed to fabricate the VNT-structure. Benefitting from the VNT-anode, the fabricated lateral AlGaN/GaN Schottky barrier diode exhibits improved performance including reduced leakage current, increased breakdown voltage, and suppressed electron trapping under reverse bias.

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5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Cited by 29 publications

References 15 publications

A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

An Intermediate Frequency Amplifier for High-Temperature Applications

A variable nanotrench structure for electric field modulation in AlGaN/GaN devices

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