5-bit/cell Characteristics using mixed program/erase mechanism in recessed channel non-volatile memory cells

This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxidenitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hothole injection, the degradation is mainly affected by the lateral electrical field over a critical point.

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Correlation between Tribological Properties, sp²/sp³-Ratio and H-Content of Low-Wear Diamond-Like Carbon (DLC) Layers

Vogli

Hoffmann

Bartis

et al. 2012

MSF

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It has been established that hardness and density of diamond-like carbon (DLC) layers can be raised by increasing ion energy during deposition, decreasing H-content and by increasing sp3-fraction. To confirm differences in hydrogen content of hydrogen containing and hydrogen free DLC films deposited at different bias voltages, layers were etched in oxygen atmosphere in a capacitively coupled plasma device. By employing real-time ellipsometry measurements, the H-content of the hydrogen containing a-C:H layers were estimated by determining the optical constants n and k (n-real part and k-imaginary part of the refractive index). In addition, DLC layers were analyzed by X-ray photoelectron spectroscopy to estimate the ratio of sp²- and sp³-hybridization. The mechanical and tribological properties of the coatings were evaluated by means of nanoindentation and ball-on-disc-tests. Finally correlations between these properties, H-content and sp3/sp2-ratio were obtained in an effort to explain different tribological behaviors of DLC-layers.

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5-bit/cell Characteristics using mixed program/erase mechanism in recessed channel non-volatile memory cells

Cited by 3 publications

References 8 publications

Investigation of 3-D stacked NAND flash memory cell string having 4F2 cell size and shield layer for suppressing cross-talk

Investigation of 3-D stacked NAND flash memory cell string having 4F2 cell size and shield layer for suppressing cross-talk

Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

Correlation between Tribological Properties, sp²/sp³-Ratio and H-Content of Low-Wear Diamond-Like Carbon (DLC) Layers

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