5-GHz CMOS LC VCOs with wide tuning ranges

Min, Baehyun; Jeong, Hang-Geun

doi:10.1109/lmwc.2005.847701

Cited by 20 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To generate the same transconductance, NMOS transistors have smaller size compared to PMOS transistors for the same channel length and gate overdrive voltage, because NMOS transistors have higher mobility. On the other hand, 1/f noise of PMOS is usually smaller than that of NMOS transistors in one order of magnitude [12].…”

Section: A Topology Selectionmentioning

confidence: 99%

“…To extend the LC-VCOs' tuning range, many researchers have presented variety of techniques. Compared to the wideband VCO using only varactors [12], by utilizing a switched capacitor array or/and switched inductor array, the targeted wide frequency range can be split into several sub-bands which can decrease the VCO tuning gain (Kvco) and lower the phase noise.…”

Section: Switched Capacitor Arraymentioning

confidence: 99%

See 1 more Smart Citation

A Wideband 9 GHz LC-VCO with Tail Current Source Array in 0.18-μm RF CMOS Process

Ma¹,

Fan²

2013

AMM

View full text Add to dashboard Cite

A wideband 9 GHz LC-VCO with tail current source array based on TSMC 0.18-μm RF CMOS process is presented in this paper. After discussing the start-up conditions, the structure of tail current source array is utilized to lower the power consumption in high frequency bands and guarantee start-up at low frequency bands. Furthermore, to extend the frequency range, a 4-bit switched capacitor array is used. Based on our analysis, a NMOS cross-coupled VCO with 4-bit PMOS tail current source array is implemented. Post-simulation results show that the tuning range is from 6.372GHz to 9.154GHz and the phase noise at 1MHz offset is less than-110dBc/Hz in the entire tuning range. The operating current of the VCO core is from 8.24mA to 13.362mA in the entire tuning range under 1.8V supply voltage. And the area of the proposed VCO is 1177.775μm × 577.54μm, with two buffer stages and pads.

show abstract

Section: A Topology Selectionmentioning

confidence: 99%

Section: Switched Capacitor Arraymentioning

confidence: 99%

A Wideband 9 GHz LC-VCO with Tail Current Source Array in 0.18-μm RF CMOS Process

Ma¹,

Fan²

2013

AMM

View full text Add to dashboard Cite

show abstract

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors

Kao

Yeh

Chiu

et al. 2017

Circuit Theory & Apps

View full text Add to dashboard Cite

Summary This paper presents cross‐coupled voltage‐controlled oscillators (VCOs) involving array of switchable inductors (i.e., N = 1 and N = 2 switchable inductors) and implemented using gallium‐nitride high electron mobility transistors on Si substrate technology for worldwide interoperability for microwave access applications. Band selection and coarse frequency tuning were achieved using the array of switchable inductors, whereas fine tuning was controlled using varactors. Two bands were obtained using the one‐stage switchable inductor VCO operating in the ranges 3.41–3.57 GHz and 3.85–3.94 GHz. The VCO output power (Pout) was 21.8 dBm at 3.57 GHz from a 10‐V power supply. Four continuous bands were obtained using the two‐stage switchable inductors VCO operating in the range of 3.16–3.4, 3.25–3.64, 3.48–3.71 and 3.64–3.9 GHz, respectively. An additional band was generated by fine‐tuning the inductance through mutual coupling between the transmission line and one of the inductors. The proposed two‐stage switchable inductors VCO provided a 21% tuning range at frequencies ranging with a control voltage ranging from 12 to 20 V, a low phase noise of −123 dBc/Hz at a 1‐MHz offset from a 3.3‐GHz carrier and a Pout of 21 dBm at 3.5 GHz from a 10‐V power supply. Copyright © 2017 John Wiley & Sons, Ltd.

show abstract