5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser

Fallahi, Mahmoud; Fan, Li; Kaneda, Yushi; Hessenius, Chris; Hader, J.; Li, Hongbo; Moloney, Jerome V.; Kunert, B.; Stolz, W.; Koch, S. W.; Murray, James T.; Bedford, Robert

doi:10.1109/lpt.2008.2003413

Cited by 77 publications

(34 citation statements)

References 7 publications

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“…Such intracavity functional elements are very difficult to use with integrated semiconductor devices. One important option enabled by the external cavity is the insertion of intracavity spectral filters, such as Brewster's angle birefringent filters [25,26], volume gratings [27], or high-reflectivity gratings [28], to control longitudinal spectral modes of the laser and possibly to select a single longitudinal lasing mode. Moreover, the insertion of intracavity saturable absorber elements to external cavity enables VECSEL to achieve laser passive mode locking with picosecond and subpicosecond pulse generation.…”

Section: )mentioning

confidence: 99%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

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Section: )mentioning

confidence: 99%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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“…The thickness and composition of each layer is optimized such that the quantum wells are positioned at the antinodes of the cavity standing wave to provide resonant periodic gain (RPG) in the active region. 5 A high-reflectivity distributed-Bragg reflector (DBR)-stack made of 21 pairs of aluminum-gallium arsenide/aluminum arsenide is grown on top of the active region. The wafer is then cleaved and mounted onto a chemical-vapor-deposition (CVD) diamond heat sink for efficient heat dissipation.…”

Section: Frequency Doubling Of An Optically Pumped Vertical-external-mentioning

confidence: 99%

Novel semiconductor lasers attractive for UV-visible applications

Fallahi¹

2009

SPIE Newsroom

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Frequency doubling of an optically pumped vertical-external-cavity surface-emitting laser enables a new multiwatt tunable yellow-orange light source.Compact, tunable, high-power semiconductor lasers, particularly those covering the UV and visible regions of the spectrum, are needed for many military and commercial applications. Yellow-orange sources are particularly desirable for sodium guide-star lasers, quantum computing, and medical applications. Semiconductor lasers in the visible region typically use one of two approaches: growth of a direct-band material with the proper energy gap, or frequency conversion of a near-IR source. Optically pumped vertical-external-cavity surfaceemitting lasers (VECSELs) are strong, low-cost candidates to meet these critical features. In addition, easy access to the laser intracavity allows for new features, such as frequency doubling (also known as second-harmonic generation, SHG), linewidth narrowing, or quality switching ('Q switching'), the production of a pulsed output beam. Compared to electrically pumped semiconductor lasers, optically pumped VECSELs have several advantages. For example, optical pumping is an easy way to achieve uniform pumping over a large area. In addition, using a barrier-pumping scheme eliminates the sensitivity to the pump wavelength and allows the use of cheap, readily available pump sources. Since no doping is required, cavity loss can be minimized.The VECSEL gain structure can be accurately designed using a many-body microscopic quantum-design tool to maximize pump absorption and improve both modal gain and high-power operation. 1 Combined with 3D optical/thermal optimization and gain-subcavity detuning, this allows for development of multiwatt sources emitting at various wavelengths. Appropriate choices for the external mirror and cavity length allow VECSELs to operate in the fundamental transverse mode (TEM 00 ) with high efficiency. By inserting a nonlinear crystal into the laser cavity, where the circulating power is 100 times stronger than the output power, efficient SHG can be achieved. Our team has successfully developed a wide range of highpower VECSELs with many desirable features, including largerange wavelength tuning, narrow linewidth, and high beam quality at various near-IR and visible wavelengths. [2][3][4] To create a yellow-orange VECSEL, we grew a structure consisting of ten repeats of highly compressive strained indium-gallium arsenide (InGaAs) quantum wells. Each quantum well is surrounded by gallium-arsenide-phosphide straincompensation layers and GaAs barriers. The thickness and composition of each layer is optimized such that the quantum wells are positioned at the antinodes of the cavity standing wave to provide resonant periodic gain (RPG) in the active region. 5 A high-reflectivity distributed-Bragg reflector (DBR)-stack made of 21 pairs of aluminum-gallium arsenide/aluminum arsenide is Continued on next page

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“…These high performance IR lasers had been realized by using InGaAs quantum wells [1][2][3], InGaAsN quantum wells [4][5][6][7], and mixed Sb-N based quantum wells [8][9][10][11], resulting in very low threshold current density and high output power laser devices. These compact and low-cost IR diode lasers [1][2][3][4][5][6][7][8][9][10][11], which are useful as excitation pumps in up-conversion method, lead to strong motivation for development of various up-conversion methods for realizing practical visible light emitters [12][13][14]. The use of these IR diode lasers had also been used for achieving up-conversion via second harmonic generation [12][13][14], resulting in red / green / blue emitters applicable for laser TV and display technologies [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…These compact and low-cost IR diode lasers [1][2][3][4][5][6][7][8][9][10][11], which are useful as excitation pumps in up-conversion method, lead to strong motivation for development of various up-conversion methods for realizing practical visible light emitters [12][13][14]. The use of these IR diode lasers had also been used for achieving up-conversion via second harmonic generation [12][13][14], resulting in red / green / blue emitters applicable for laser TV and display technologies [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Temporal dynamics of IR-to-visible up-conversion in LiNbO_3:Er^3+/Yb^3+: a path to phosphors with tunable chromaticity

Marín-Dobrincic¹,

Cantelar²,

Cussó³

2012

Opt. Mater. Express

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Abstract:In this work, a study of the temporal dynamical behavior of IRvisible up-conversion in the LiNbO 3 : Er 3+ /Yb 3+ system under modulated IR excitation at 980 nm is presented. It is shown that modulation characteristics, including the relative green-to-red emission ratio (GRR), can be quantitatively explained by using the rate equations formalism. The relevant spectroscopic magnitudes are identified and this provides a general framework to explore the properties of other Er 3+ /Yb 3+ doped up-converting phosphors.

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5-W Yellow Laser by Intracavity Frequency Doubling of High-Power Vertical-External-Cavity Surface-Emitting Laser

Cited by 77 publications

References 7 publications

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Novel semiconductor lasers attractive for UV-visible applications

Temporal dynamics of IR-to-visible up-conversion in LiNbO_3:Er^3+/Yb^3+: a path to phosphors with tunable chromaticity

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