50-Gb/s silicon modulator using 250-&amp;#x00B5;m-Long phase shifter based-on forward-biased pin diodes

Akiyama, Suguru; Baba, Toshihiko; Imai, Masahiko; Akagawa, Takeshi; Noguchi, Masataka; Saito, Emiko; Noguchi, Yoshiji; Hirayama, Naoki; Horikawa, Tsuyoshi; Usuki, Tatsuya

doi:10.1109/group4.2012.6324130

Cited by 21 publications

(17 citation statements)

References 12 publications

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“…Compact and efficient MZI modulators have been demonstrated using 100-250 μm long carrier-injection p-i-n diodes for modulation [15], [25]. The disadvantage of these devices is that they rely on preemphasis to achieve bitrates in excess of 5 Gb/s, which consumes an additional 1-5 pJ/bit [102].…”

Section: Modulator Candidates In Simentioning

confidence: 99%

“…MZI modulators [11]- [25] are tolerant to manufacturing errors, temperature change, or laser wavelength drift, but they typically consume high power (>1 pJ/bit), and may be large in size (>1 mm), modest in speed (∼10 GHz), nonoptimal optical loss (>3 dB at on-state), or require high voltage (>2 V) for a good ER (>5 dB). Compact and efficient MZI modulators have been demonstrated using 100-250 μm long carrier-injection p-i-n diodes for modulation [15], [25].…”

Section: Modulator Candidates In Simentioning

confidence: 99%

See 1 more Smart Citation

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

153

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Silicon photonics is the most promising pathway to achieve >10 Tb/s off-chip I/O bandwidth required by nextgeneration high-performance computing and switching systems. Ring resonator modulators offer the advantages of small footprint, low power, high efficiency, low loss, high speed, and CMOS compatibility for silicon photonic links. This paper presents an indepth discussion of practical microring modulators in silicon, covering their performance metrics, design tradeoffs, optimization, p-n junction geometries, complex ring configurations, and tuning solutions. Various demonstrated Si ring modulators are reviewed and potential future developments are briefly discussed.

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Section: Modulator Candidates In Simentioning

confidence: 99%

Section: Modulator Candidates In Simentioning

confidence: 99%

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

153

View full text Add to dashboard Cite

show abstract

“…High-speed modulations up to 60 Gbit s −1 have been demonstrated (Xiao et al, 2013) by properly choosing the doping concentration and precisely locating the junction. Modulators based on the slow light effect can be integrated on a very small area and exhibit a very low V π L of 0.85 V·cm (Brimont et al, 2012;Akiyama et al, 2012). However, the loss is higher than for other modulators of the same length.…”

Section: Comparison With Other Technologiesmentioning

confidence: 99%

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology

Rosa¹,

Rathgeber

Elster

et al. 2017

Adv. Radio Sci.

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Abstract. We present the design of a single-drive MachZehnder modulator for amplitude modulation in silicon-oninsulator technology with 250 nm active layer thickness. The applied RF signal modulates the carrier density in a reverse biased lateral pn-junction. The free carrier plasma dispersion effect in silicon leads to a change in the refractive index. The modulation efficiency and the optical loss due to free carriers are analyzed for different doping configurations. The intrinsic electrical parameters of the pn-junction of the phase shifter like resistance and capacitance and the corresponding RC-limit are studied. A first prototype in this technology fabricated at the IMS CHIPS Stuttgart is successfully measured. The structure has a modulation efficiency of V π L = 3.1 V·cm at 2 V reverse bias. The on-chip insertion loss is 4.2 dB. The structure exhibits an extinction ratio of around 32 dB. The length of the phase shifter is 0.5 mm. The cutoff frequency of the entire modulator is 30 GHz at 2 V. Finally, an optimization of the doping structure is presented to reduce the optical loss and to improve the modulation efficiency. The optimized silicon optical modulator shows a theoretical modulation efficiency of V π L = 1.8 V·cm at 6 V bias and a maximum optical loss due to the free carrier absorption of around 3.1 dB cm −1 . An ultra-low fiber-to-fiber loss of approximately 4.8 dB is expected using the state of the art optical components in the used technology.

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“…It has been extensively investigated to improve modulation rate, reduce power consumption, and apply advanced modulation formats. Modulation rates of 40 Gb/s or higher have been widely demonstrated in 2012, such as 50 Gb/s with the basic reverse-biased PN junction [12] , 40 Gb/s with PIPIN junction [13] , 50 Gb/s with forward-biased PIN junction [14] and so on. Microring is an efficient approach for low power modulator because of its compact size, for example 33 fJ/bit [15] at 20 Gb/s reported by IBM in 2011.…”

Section: Modulatorsmentioning

confidence: 99%

Development trends in silicon photonics

Zhou¹,

Tu²,

Yin³

et al. 2013

中国光学快报

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Silicon photonics has become one of the major technologies in this very information age. It has been intensively pursued by researchers and entrepreneurs all over the world in recent years. Achieving the large scale silicon photonic integration, particularly monolithic integration, is the final goal so that high density data communication will become much cheaper, more reliable, and less energy consuming. Comparing with the developed countries, China may need to invest more to develop top down nanoscale integration capability (more on processing technology) to sustain the development in silicon photonics and to elevate its own industry structure.

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50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes

Cited by 21 publications

References 12 publications

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology

Development trends in silicon photonics

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50-Gb/s silicon modulator using 250-&#x00B5;m-Long phase shifter based-on forward-biased pin diodes

Cited by 21 publications

References 12 publications

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology

Development trends in silicon photonics

Contact Info

Product

Resources

About

50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology