50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

Abstract

We developed an electro-absorption modulator integrated DFB laser using a lateral pin diode structure. Selective doping by thermal diffusion and ion implantation is essential for fabricating a monolithic integrated device. The device was modulated by 50-Gbit/s-NRZ signal with clear-eye opening.