2021
DOI: 10.1109/jlt.2021.3082710
|View full text |Cite
|
Sign up to set email alerts
|

50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Abstract: We fabricate a membrane InP-based electroabsorption modulator (EAM), in which an InGaAsP-based multiple-quantum-well (MQW) absorption region is buried with an InP layer, on Si-waveguide circuits. By optical coupling between the MQW absorption region and Si core, a low-loss and large-absorption-length (300-m-long) supermode waveguide is designed to suppress electric-field screening at high optical input power. The EAM is fabricated by combining direct bonding of the MQW layer and regrowth of the InP layer on a… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
8
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
3
2

Relationship

1
4

Authors

Journals

citations
Cited by 7 publications
(8 citation statements)
references
References 19 publications
0
8
0
Order By: Relevance
“…This helps to increase the modulation efficiency while suppressing electric-field screening even at high optical input power. Compared with our previous L-band membrane EAM [14], the number of MQW periods was increased from six to nine without increasing the InP layer thickness. A nine-period MQW can be fabricated by using our standard on-Si regrowth process.…”
Section: Design and Fabricationmentioning
confidence: 87%
See 3 more Smart Citations
“…This helps to increase the modulation efficiency while suppressing electric-field screening even at high optical input power. Compared with our previous L-band membrane EAM [14], the number of MQW periods was increased from six to nine without increasing the InP layer thickness. A nine-period MQW can be fabricated by using our standard on-Si regrowth process.…”
Section: Design and Fabricationmentioning
confidence: 87%
“…In order to fabricate lateral p-i-n diodes, 400-nm-wide MQW cores are buried in 230-nm-thick InP layers. By applying a reverse bias voltage to the electrodes of the EAM, a lateral electric field is applied to the MQW layer, and the absorption coefficient is changed by the two-dimensional (2D) Franz-Keldysh effect (2D-FKE) [14], [16]. To obtain high modulation efficiency, it is necessary to increase the modal overlap with the MQW layers.…”
Section: Design and Fabricationmentioning
confidence: 99%
See 2 more Smart Citations
“…Higher bandwidth requirement and faster speed are substantially enhancing the need for an electro-optic transmitter in data center interconnections, microwave photonic links and optical communication systems [1][2][3]. Electro-absorption modulated lasers (EMLs) have gained a lot of traction due to their low chirp, compact structure and large bandwidth, while it will create big challenges for EML measurement in the wideband frequency range [4][5][6].…”
Section: Introductionmentioning
confidence: 99%