50 GHz high output voltage distributed amplifiers for 40 Gb/s EO modulator driver application

Yuen, C.; Laursen, Kjeld; Chu, Duc; Mar, Kyu Kyu

doi:10.1109/mwsym.2002.1011660

Cited by 12 publications

(5 citation statements)

References 5 publications

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“…Based on the principle of transmission line (TML), the intrinsic parasitic capacitances of the active devices combine with the external inductive components to form the artificial TMLs, and a wide bandwidth can be obtained [6]- [9]. Fig.…”

Section: A Distributed Amplifiermentioning

confidence: 99%

A 40-Gb/s 4-V_pp Differential Modulator Driver in 90-nm CMOS

Chiu

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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Section: A Distributed Amplifiermentioning

confidence: 99%

A 40-Gb/s 4-V_pp Differential Modulator Driver in 90-nm CMOS

Chiu

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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“…Especially, at frequencies out of band when matching between the stages of the amplifier is lost this can result in oscillation. Stabilization of a distributed amplifier can be achieved by putting high ohmic resistors in parallel to the drain transmission lines, as shown in [1,2]. Stabilization of the cascode itself can be done by using a resistor in series or parallel to the capacitor at the second gate terminal [3,4].…”

Section: Circuit Designmentioning

confidence: 99%

AGaAs PHEMT Distributed Amplifier with Low Group Delay Time Variation for 40 GBit/s Optical Systems

Hafele

Schworer

Beilenhoff

et al. 2003

2003 33rd European Microwave Conference

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A four stage distributed amplifier MMIC with 11.2 dB 1.0 dB gain and a bandwidth exceeding 50 GHz has been demonstrated in a commercially available 0.15 µm pseudomorphic GaAs HEMT technology. Group delay time variation from 1.5 GHz to 40 GHz equals to 3.5 ps. When used as preamplifier, biasing can be applied from a single 5.2 V supply via the reverse drain load without the need for an expensive external RF-coil for decoupling. The resulting overall power consumption is less than 230 mW. The noise figure was measured to be between 5.1 dB and 3.0 dB in the band from 3 GHz to 17 GHz. The output voltage swing of the 20 GHz fundamental at the 1-dB gain compression is 2.1 V, this makes the circuit also suitable as preamplifier for a modulator driver.

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“…In case of 40 Gb/s systems, the modulator driver is very challenging because it simultaneously has to achieve a high output voltage swing and a bandwidth exceeding 30 GHz [1]. The increasing speed of silicon based technologies, like SiGe HBT or Silicon On Insulator (SOI) CMOS allows to fulfill the frequency requirements for most components in 40 Gb/s systems.…”

Section: Introductionmentioning

confidence: 99%

GaAs distributed amplifiers with up to 350 GHz gain-bandwidth product for 40 Gb/s LiNbO/sub 3/ modulator drivers

Hafele

Beilenhoff²,

Schumacher³

2005

2005 European Microwave Conference

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In this paper, we report on two Distributed Amplifier (DA) concepts for 40 Gb/s modulator drivers. Both amplifiers are fabricated in a commercially available 150 nm GaAs power pHEMT technology. The first DA is a six stages design with capacitive division on the gate line. Gain and bandwidth of this amplifier equal to 13.2 dB and 41 GHz, respectively. The other DA consists of nine cascode stages, achieving 20.1 dB gain and a bandwidth of 34.5 GHz. Output power of the two amplifiers is higher than 21 dBm or 7 V pp up to 20 GHz, which makes them suitable for driving lithium-niobate (LiNbO 3 ) modulators.

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50 GHz high output voltage distributed amplifiers for 40 Gb/s EO modulator driver application

Cited by 12 publications

References 5 publications

A 40-Gb/s 4-V_pp Differential Modulator Driver in 90-nm CMOS

A 40-Gb/s 4-V_pp Differential Modulator Driver in 90-nm CMOS

AGaAs PHEMT Distributed Amplifier with Low Group Delay Time Variation for 40 GBit/s Optical Systems

GaAs distributed amplifiers with up to 350 GHz gain-bandwidth product for 40 Gb/s LiNbO/sub 3/ modulator drivers

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50 GHz high output voltage distributed amplifiers for 40 Gb/s EO modulator driver application

Cited by 12 publications

References 5 publications

A 40-Gb/s 4-Vpp Differential Modulator Driver in 90-nm CMOS

A 40-Gb/s 4-Vpp Differential Modulator Driver in 90-nm CMOS

AGaAs PHEMT Distributed Amplifier with Low Group Delay Time Variation for 40 GBit/s Optical Systems

GaAs distributed amplifiers with up to 350 GHz gain-bandwidth product for 40 Gb/s LiNbO/sub 3/ modulator drivers

Contact Info

Product

Resources

About

A 40-Gb/s 4-V_pp Differential Modulator Driver in 90-nm CMOS

A 40-Gb/s 4-V_pp Differential Modulator Driver in 90-nm CMOS