500-560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells

Klude, M.; Alexe, G.; Kruse, C.; Passow, T.; Heinke, H.; Hommel, D.

doi:10.1002/1521-3951(200201)229:2<935::aid-pssb935>3.0.co;2-3

Cited by 41 publications

(13 citation statements)

References 26 publications

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“…Chalcogenide glass fibers transmit in IR region. These glasses are used for fabricating active devices, such as infrared transmitting optical fiber, optical amplifiers, infrared lasers, blue laser diodes and efficient femto second switches [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of a-Ge-Se-In thin films

Sharma

Tripathi

Monga

et al. 2008

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Electrical properties of a-Ge-Se-In thin films

Sharma

Tripathi

Monga

et al. 2008

Journal of Non-Crystalline Solids

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“…The resulting emission wavelength was 560 nm. Further details can be found in [6,7]. For processing ridge structures out of the QD lasers the top layers were etched down beneath the 10 µm injection stripe by ion beam etching about 1 µm into the middle of the p-side waveguide layer.…”

Section: Resultsmentioning

confidence: 99%

“…The n-side layers and the QW were doped with chlorine as well as the p-side layers were doped with nitrogen-plasma. Further details of growth can be found in [6]. For strain compensation, the QW has to be embedded into tensile strain layers.…”

Section: Quantum Well Laser Diodes / Strain Compensating Layersmentioning

confidence: 99%

ZnSe‐based laser diodes: New approaches

Gust

Kruse

Klude

et al. 2005

phys. stat. sol. (c)

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In this paper we report on recent results concerning conventional edge emitting laser structures containing either quantum wells or quantum dots as region and vertical-cavity surface-emitting lasers. In the first part a series of four similar laser structures containing quantum wells with an emission wavelength of 520 nm was grown by molecular beam epitaxy in order to perform a systematic study of lifetime improvement. They differed in the alternating implementation of an additional 5 nm thick ZnSSe layer with a high sulfur composition of 25 % neighboring the quantum well. A high stability of the CdZnSSe active layer was observed by introducing such a kind of strain compensating layers. Lifetime measurements showed a significant improvement up to one order of magnitude using p-and n-& p-side layers. In the second part electro-optical characteristics of ridge and planar CdSe quantum dot laser diodes were compared. A reduction of the threshold current density by a factor of 4.7 for the ridge structure was obtained. This has to be associated to the reduction of current spreading inside the laser diodes. Furthermore, a significant slower degradation of CdSe quantum dot structures compared to common ZnSe-based QW structures was observed. An operating time over 2700 h in pulsed mode experiments at 50 A/cm 2 in LED mode was achieved. In the third part we report on the realization of an optically pumped monolithic vertical-cavity surface-emitting laser operating at a wavelength of 511 nm. The microresonator has a quality factor of 3200 while the threshold excitation power density for the onset of lasing is 22 kW/cm 2 at room temperature. Micropillars of different diameter fabricated out of this structure show discrete optical modes due to the three dimensional optical confinement of the optical wave.1 Introduction Nowadays for various applications small and compact light sources in kind of semiconductor laser diodes are necessary [1]. They combine the advantages of classical laser, e.g. a coherent light beam at a certain wavelength and the low dimensions which are requirements for new techniques and devices. But many these applications specifically needs light emitters in the green spectra range. Up to now only II-VI-based laser diodes are able to provide such a laser emission. Edge-emitters using CdZnSe or CdZnSSe quantum wells (QWs) as the active part cover the whole wavelength range between 500 nm an 560 nm just by varying the Cd content [2], while a quantum dot (QD) laser diode shows emission at 560 nm [3]. However, the commercialization of ZnSe-based laser diodes is hampered by their limited lifetime [4].A big issue of II-VI LD is the fast degradation caused by the instability of the active region. One problem is the compressive strain of the quantum well due to the Cd content. For an emission in the green-yellow region a Cd content between 20 % and 40 % is necessary. One approach to prevent this kind of degradation is the introduction of additional strain compensating layers. These layers consist out of thin ZnSSe ...

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“…In the literature, there are a few reports about CdZnSSe. Most of them are related to using in ZnSe-based laser diodes [19,20]. Only Chavhan et al [21] reported the growth and characterization of CdZn(S 1−x Se x ) 2 alloy film using the solution growth technique and in our previous study [22], it was reported the optical properties of * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%