51.1: Invited Paper: Flexible CMOS and Electrophoretic Displays

Abstract

Flexible CMOS has been achieved by combining nMOS a‐Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a‐Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.

P‐115: Non‐flat TFT‐LCD Technology for Mobile Applications

“…The progress of non-flat panel display (nFPD) is relatively immature in contrast of FPD. Although there are several methods revealed to fabricate non-flat displays [2][3][4], it remains great challenges to achieve high viewing quality and desired flexibility at the same time. The essential characteristics of an ideal non-flat mobile panel consist of sunlight readable property, wide color gamut, fast response time, lightness and thinness.…”