53.2: Fabrication and Characterization of InGaN‐GaN MQWs Micro‐LEDs with Optimized Morphology and array structure

Abstract

Single individual and array matrix Micro‐LED were designed and fabricated with size from 6um to 100um We investigated the effects of current density on the performance of color shift and evaluate our device stability and uniformity. Meanwhile, we measured the device leakage current less than 10−12A and calculated the ideal factor, which are between 1.8 and 2.0. We also compared with different etching power (high power and low power) on Micro‐LEDs’ sidewall morphology and current‐voltage performance.

Enhanced Contact Performance of High-Brightness Micro- LEDs via ITO/Al Anode Stack and Annealing Process

“…They achieved Ohmic contact between P-GaN and CSL by the annealing process 29 . They also investigated the influence of temperature on the Ohmic contact between the anode electrode and P-GaN by employing temperature-dependent transmission line model (TLM) measurements.…”

Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process

“…On the other hand, Li et al deposited Ni/Au (4 nm/4 nm) as the CSL layer. They achieved Ohmic contact between P-GaN and CSL by the annealing process 29 . They also investigated the influence of temperature on the Ohmic contact between the anode electrode and P-GaN by employing temperature-dependent transmission line model (TLM) measurements.…”