Room temperature top-gate self-aligned amorphous InGaZnOTFTs were successfully fabricated on colorless polyimide plastic substrates for the first time. All these thin films were deposited by sputtering system at room temperature. The maximum field-effect mobility is 48.5 cm 2 /V-s, the subthreshold swing is 0.1 V/decade, and the threshold voltage is -1V.