54.3: Impulsive Driving Technique in S-PVA Architecture

Kim, Taesung; Shin, Byung-Hyuk; Berkeley, Brian H.; Kim, Sang Soo

doi:10.1889/1.2433336

Cited by 16 publications

(15 citation statements)

References 5 publications

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“…We have defined another method, super impulsive technology (SIT), which exploits the advantages of S-PVA to enable 120Hz driving of a conventional panel structure by using an efficient charging method. This topic is covered in depth separately at this conference [8]. The principal challenge of this approach is the need to create interpolated frame data between incoming frames.…”

Section: Figure 7 Quasi-impulsive Scan Methodsmentioning

confidence: 99%

69.1: Invited Paper: Advancements for Highest-Performance LCD-TV

Kim

Berkeley

Kim

2006

SID Symposium Digest

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Samsung continues to pursue state‐of‐the‐art performance to propel the LCD‐TV market. Past issues for LCD‐TV have included achievement of high contrast ratio, preservation of low light detail, color tracking and color accuracy, high luminance and color uniformity, and high performance over a wide angle of view. As these are now legacy issues, Samsung has turned its attention to the last major performance challenge for LCD‐TV, which is faithful motion image reproduction. This paper will consider the various approaches being taken to address this issue, then will describe new technology to counteract the problem, including a new panel structure to enable high speed driving. Additionally, Samsung has just announced groundbreaking of its 8th generation LCD‐TV panel facility. This new development, which will enable highly efficient mass‐production of >50″ screens, will also be reported.

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Section: Figure 7 Quasi-impulsive Scan Methodsmentioning

confidence: 99%

69.1: Invited Paper: Advancements for Highest-Performance LCD-TV

Kim

Berkeley

Kim

2006

SID Symposium Digest

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“…The 120 Hz driving method is being adopted in order to reduce a motion blur by inserting a black image between each frame in TFT-LCD displays. [19][20][21] This negative voltage is attributed to decreasing the threshold voltage of the TFT. However, its negative shift is recovered to the initial value by the positive voltage of the effective gate voltage during the driving field when the image is displayed.…”

Section: H492mentioning

confidence: 99%

Negative Data Insertion Method for Suppressing Hysteresis of Polysilicon Thin-Film Transistors

Kim

Han

Lee³

et al. 2008

J. Electrochem. Soc.

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The electrical hysteresis of polysilicon thin-film transistors ͑poly-Si TFTs͒ employing a negative data insertion ͑NDI͒ has been investigated. It is known that the image sticking in active-matrix organic light emitting diode displays using the poly-Si TFT back plane was mainly caused by the hysteresis of driving TFT in a pixel. In this paper, we propose a type of NDI method using inverse data signals in order to suppress the hysteresis of poly-Si TFTs. Experimental results show that the NDI was very effective to reduce the hysteresis level of poly-Si TFTs induced by carrier trapping and detrapping.Active-matrix organic light-emitting diode ͑AMOLED͒ displays have attracted considerable attention among flat-panel displays due to high brightness with low power consumption, light weight, fast response time, wide viewing angle, and self-emissive characteristics. 1,2 Recently, low-temperature polysilicon thin-film transistor ͑poly-Si TFT͒-based AMOLED displays have been commercialized, presenting superiority of image quality. 3 Poly-Si TFTs have been preferred as a back plane of AMOLED displays due to their higher mobility and greater stability compared to hydrogenated amorphous silicon thin-film transistors ͑a-Si:H-TFTs͒. However, poly-Si TFT-based AMOLED displays suffer from the nonuniformity problem caused by irregular characteristics of laser crystallization. In order to overcome the nonuniformity of poly-Si TFTs and make the mass production possible, various kinds of compensation methods 4-6 and different crystallization methods are being introduced continuously. 7,8 Image sticking is another issue in poly-Si TFT-based AMOLED displays, which is known to be caused by the hysteresis of poly-Si TFTs according to different bias stress. 9 Variations in TFT characteristics by the hysteresis occur in different degrees for each pixel, causing each driving TFT in a display panel to have different threshold voltage values. Such an effect is often referred to as differential aging, which causes some undesirable visual defects, such as image sticking or residual image. 9 In order to solve this problem, there are several pixel circuits for driving organic light-emitting diode ͑OLED͒ current that compensates for the variation of TFT characteristics, some of which employ current programming, 4 time ratio gray scaling, 5 or threshold voltage compensating methods. 6 However, these methods require development of complicated source drive integrated circuits and also limit the aperture ratio of pixel due to the complexity of pixel circuit. 10 In this paper, we propose a type of negative data insertion ͑NDI͒ method capable of suppressing the hysteresis of poly-Si TFTs to enhance the image quality of AMOLED displays without the use of any complicated pixel circuit. TFT FabricationIn order to investigate the electrical hysteresis of poly-Si TFTs and the effect of NDI, top-gate p-channel TFTs were fabricated on SiO 2 ͑300 nm͒ stacked as a buffer layer on a glass substrate. A 50 nm thick a-Si film was deposited on the buffer layer by plas...

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“…EEFLs and EEFL-BLU have been introduced since 2000 [1][2][3][4][5][6][7][8][9][10]. The application of the arrays of EEFL-lamps to BLUs for 32" LCD-TV has been recognized in Korea industry from 2004.…”

Section: Introductionmentioning

confidence: 99%

“…In the operation of a single lamp system, the lamp current in (a), and the lamp voltage2 V in (b) with the operation frequency ω normalized with r ω…”

mentioning

confidence: 99%