545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth &gt; 4 V) by Ion Beam Etching

Gao, Han; Gu, Yitian; Zhang, Yu; Li, Jialun; Zhou, Junmin; Guo, Haowen; Lau, Kei May; Zou, Xinbo

doi:10.1109/led.2024.3386824

IEEE Electron Device Lett.

2024

DOI: 10.1109/led.2024.3386824

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545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching

Han Gao,

Yitian Gu,

Yu Zhang

et al.

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Cited by 2 publications

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1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure

Sun,

Wang,

Huang

et al. 2024

Applied Physics Letters

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This Letter demonstrates a 1500-V enhancement-mode (E-mode) GaN-based high electron mobility transistors (HEMTs) based on the recessed-free structure. The E-mode GaN-based HEMTs fabricated based on the ultrathin barrier epitaxial structure have a small gate interface traps density (Dit) of ∼1012 cm−2 eV−1, which can be attributed to the avoidance of AlGaN etching in the gate region. Meanwhile, a small threshold voltage (Vth) hysteresis of 19 mV and a small subthreshold swing of 101 mV/dec are achieved in the fabricated devices with a Vth around 1.91 V. A small Vth shift of 0.05 V was achieved under positive gate voltage stress, indicating that the devices have good Vth stability. Meanwhile, a high yield of more than 90% has been achieved on 6-in. wafer, which provides a good scheme for the commercialization of E-mode HEMTs.

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1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure

Sun,

Wang,

Huang

et al. 2024

Applied Physics Letters

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5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer

Wang,

Mi,

et al. 2024

IEEE Electron Device Lett.

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545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching

Cited by 2 publications

References 31 publications

1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure

1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure

5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer

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