550 $^{\circ}\hbox{C}$ Integrated Logic Circuits using 6H-SiC JFETs

Soong, Chia-Wei; Patil, Amita; Garverick, S.L.; Fu, Xiao‐An; Mehregany, Mehran

doi:10.1109/led.2012.2206792

Cited by 29 publications

(11 citation statements)

References 12 publications

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“…Complementary metal-oxide-semiconductor (CMOS) digital gates were first demonstrated up to 300°C in 6H-SiC [3], and more recently up to 400°C in 4H-SiC together with analog circuits [4]. JFET-based digital gates in 6H-SiC have recently reported operation up to 550°C [5]. The performance of this JFET-based inverter, however, degrades when the temperature rises; its high noise margin (NM) is noticeably reduced at higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Lanni

Malm

Östling

et al. 2013

IEEE Electron Device Lett.

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Section: Introductionmentioning

confidence: 99%

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Lanni

Malm

Östling

et al. 2013

IEEE Electron Device Lett.

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“…Operation of CMOS digital gates was first demonstrated up to 300 C in 6H-SiC [4], and more recently up to 400 C in 4H-SiC for both analogue and digital circuits [5], [6]. JFET-based digital gates in 6H-SiC have recently reported operation up to 550 C [7]. High-temperature bipolar ICs have been also demonstrated in 4H-SiC.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, in order to fully benefit from the high-temperature capability of SiC availability of a high-temperature metallization system (which includes contacts to SiC and interconnects that are stable in a wide temperature range and especially at extreme temperatures) is critical. Among the aforementioned SiC IC technologies only [3] and [7] employ a high-temperature metallization system based on a stack of Ti/TaSi 2 /Pt with platinum as the top layer. Except for [5] and [6], for which no process details are provided, all the remaining use aluminumbased metallization systems.…”

Section: Introductionmentioning

confidence: 99%

A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits

Lanni

Malm

Zetterling

et al. 2013

Journal of Microelectronics and Electronic Packaging

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AbstractÀA 4H-SiC bipolar technology suitable for hightemperature integrated circuits is tested with two interconnect systems based on aluminum and platinum. Successful operation of low-voltage bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) is reported from 278C up to 5008C for both the metallization systems. When operated on 215 V supply voltage, aluminum and platinum interconnect OR-NOR gates showed stable noise margins of about 1 V and asymmetric propagation delays of about 200 and 700 ns in the whole temperature range for both OR and NOR output. The performance of aluminum and platinum interconnects was evaluated by performing accelerated electromigration tests at 3008C with current density of about 1 MA/cm 2 on contact chains consisting of 10 integrated resistors. Although in both cases the contact chains failed after less than one hour, different failure mechanisms were observed for the two metallization systems: electromigration for the aluminum system and poor step coverage and via filling for the platinum system.

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“…Their operation and stability were reported in the 25 °C to 540 °C temperature range. Using 6H-SiC depletion-mode JFET transistors, the design characterization of various logic circuits (inverter, NAND, and NOR) were reported in [20] at extreme temperatures reaching 550 °C. In [21], low-voltage 4H-SiC n-p-n bipolar devices are used to implement OR–NOR gates and a three-stage ring oscillator.…”

Section: Introductionmentioning

confidence: 99%

A GaN-Based Wireless Monitoring System for High-Temperature Applications

Hassan

Ali

Trigui

et al. 2019

Sensors

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A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C).

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550 $^{\circ}\hbox{C}$ Integrated Logic Circuits using 6H-SiC JFETs

Cited by 29 publications

References 12 publications

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits

A GaN-Based Wireless Monitoring System for High-Temperature Applications

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