57 GHz Acoustic Resonator with k<sup>2</sup> of 7.3 % and Q of 56 in Thin-Film Lithium Niobate

Kramer, Jack; Cho, Sinwoo; Liao, Michael E.; Huynh, Karina; Barrera, Omar; Matto, Lezli; Goorsky, Mark S.; Lu, Ruochen

doi:10.1109/iedm45625.2022.10019391

Cited by 34 publications

(3 citation statements)

References 16 publications

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“…In Fig. 10, scatter plots comparing the performance of the devices of this work in terms of Q • k 2 t product with others found in the literature operating above 8 GHz are shown [17], [22], [31], [35]- [43]. As compared to AlN or ScAlN LWR, the present results are undoubtedly standing out.…”

Section: Resultssupporting

confidence: 65%

6–20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends

Giribaldi,

Colombo,

Rinaldi

2023

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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This paper reports on 30% Scandium-doped Aluminum Nitride (ScAlN) Lateral Field-Excited (LFE) Crosssectional Lame' Mode Resonators (CLMRs) with unprecedented performance in the 6-20 GHz range. By combining highcrystallinity 30% ScAlN piezoelectric thin-films, a lithographic tunability of the resonance frequency, and a simple 3-mask post-CMOS compatible fabrication process, we propose a technology platform that can enable the mass-production of low-loss, wideband, and compact microacoustic filtering devices spanning a wide spectrum portion on the same chip for the next-generation RF front-ends of handsets. The present work demonstrates a successful scaling of the microacoustic technology well beyond the sub-6 GHz 5G band, as well as the outstanding capabilities of high-crystallinity 30% ScAlN piezoelectric layers in delivering high-quality factor (Q) and high-electromechanical coupling (k 2 t ) resonators, notably exceeding the state-of-the-art in terms of relevant figures of merit. Furthermore, we experimentally investigate the impact of geometrical parameters such as tethering configuration and width-over-length ratio on the devices' 3dB quality factor (Q 3dB ), power linearity, and Temperature Coefficient of Frequency (TCF). By adopting a statistical approach for data analysis, we determine the optimal geometry to maximize the Q. Moreover, we experimentally demonstrate that a fully tethered device's configuration ensures superior power linearity, lower TCF, and higher device yield, and select that as best design trade-off between all the variables under consideration.Finally, we discuss a further scaling of LFE CLMRs, both in terms of higher doping levels in the piezoelectric layer, in order to enhance the performance of microacoustic filters, and in terms of higher operation frequencies, in order to reach and cover the mm-waves spectrum.

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Section: Resultssupporting

confidence: 65%

6–20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends

Giribaldi,

Colombo,

Rinaldi

2023

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…[49], [50]. Since k 2 eff varies over frequency, a filter design using these resonators must make a tradeoff between maximum bandwidth and center frequency tuning range.…”

Section: Discussionmentioning

confidence: 99%

A Distributed Magnetostatic Resonator

Devitt,

Tiwari,

Bhave

et al. 2024

IEEE Trans. Microwave Theory Techn.

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This work reports the design, fabrication, and characterization of coupling-enhanced magnetostatic forward volume wave (MSFVW) resonators with significant spur suppression. The fabrication is based on surface micromachining of yttrium iron garnet (YIG) film on a gadolinium gallium garnet (GGG) substrate with thick gold transducers. A distributed resonator is used to excite forward volume waves in YIG to realize a frequency-dependent coupling boost. Fabricated devices at 18 and 7 GHz show coupling coefficients as high as 13% and quality factors above 1000. Higher order magnetostatic mode suppression is experimentally demonstrated through a combination of transducer and YIG geometry design.

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“…This is especially problematic as frequencies are scaled beyond the spectrum allocated for 5 G (3)(4)(5)(6), where RF silicon-on-insulator switches exhibit unacceptably high loss when utilized in switched filter banks 4,5 . For example, the FR3 band from 7.125 to 24.25 GHz under exploration for 6 G networks will require extensive innovations in both RF switch 4,6 and acoustic filter [7][8][9][10] technologies if it is to adopt the massively parallel switched acoustic filter banks utilized in 4 G and 5 G networks. As compared to the traditional implementation of a switched filter-bank, a single tunable filter has great potential to reduce the system cost, size, complexity, and remove entirely the additional switch paths loss 2,[11][12][13] .…”

mentioning

confidence: 99%

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

Du,

Idjadi,

Ding

et al. 2024

Nat Commun

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A single tunable filter simplifies complexity, reduces insertion loss, and minimizes size compared to frequency switchable filter banks commonly used for radio frequency (RF) band selection. Magnetostatic wave (MSW) filters stand out for their wide, continuous frequency tuning and high-quality factor. However, MSW filters employing electromagnets for tuning consume excessive power and space, unsuitable for consumer wireless applications. Here, we demonstrate miniature and high selectivity MSW tunable filters with zero static power consumption, occupying less than 2 cc. The center frequency is continuously tunable from 3.4 GHz to 11.1 GHz via current pulses of sub-millisecond duration applied to a small and nonvolatile magnetic bias assembly. This assembly is limited in the area over which it can achieve a large and uniform magnetic field, necessitating filters realized from small resonant cavities micromachined in thin films of Yttrium Iron Garnet. Filter insertion loss of 3.2 dB to 5.1 dB and out-of-band third order input intercept point greater than 41 dBm are achieved. The filter’s broad frequency range, compact size, low insertion loss, high out-of-band linearity, and zero static power consumption are essential for protecting RF transceivers from interference, thus facilitating their use in mobile applications like IoT and 6 G networks.

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57 GHz Acoustic Resonator with k² of 7.3 % and Q of 56 in Thin-Film Lithium Niobate

Cited by 34 publications

References 16 publications

6–20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends

6–20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends

A Distributed Magnetostatic Resonator

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

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57 GHz Acoustic Resonator with k2 of 7.3 % and Q of 56 in Thin-Film Lithium Niobate

Cited by 34 publications

References 16 publications

6–20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends

6–20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends

A Distributed Magnetostatic Resonator

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

Contact Info

Product

Resources

About

57 GHz Acoustic Resonator with k² of 7.3 % and Q of 56 in Thin-Film Lithium Niobate