59.3: Bridged‐grain (BG) Eximer Laser Annealing (ELA) Polycrystalline Silicon Thin Film Transistors (TFTs)

Abstract

A new technique bridged-grain (BG) was introduced. Using this BG eximer laser annealing (ELA) poly-Si as an active layer, the grain boundary effects can be reduced. Important electrical properties such as sub-threshold swing, threshold voltage, maximum field effect mobility, leakage current, on-off ratio and device uniformity across the substrate can all be improved using the present technique. The improvement can be achieved at low cost, thus making inexpensive, high performance LTPS TFT a reality.