59 fs mode-locked Yb:KGW oscillator pumped by a single-mode laser diode

Kowalczyk, Maciej; Sotor, Jarosław; Abramski, Krzysztof M.

doi:10.1088/1612-2011/13/3/035801

Cited by 17 publications

(12 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A successful mode-locking was also demonstrated with a number of different absorbers, such as QW-SESAM [10], saturable Bragg reflector [11], Kerr-lens [12], carbon nanotubes [13], and graphene monolayers [14]. Recently, pulses as short as 59 fs with 62 mW of an output power were reported [15]. This laser crystal can offer a broad amplification bandwidth (~25 nm), a high emission cross-section (~2.8 × 10−20 cm2), a relatively high thermal conductivity (~3.3 W/m/K), and also a small intrinsic quantum defect [16].…”

mentioning

confidence: 99%

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450 kW of peak power

et al. 2016

View full text Add to dashboard Cite

The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

show abstract

mentioning

confidence: 99%

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450 kW of peak power

et al. 2016

View full text Add to dashboard Cite

show abstract

“…We employed the standard fiber based saturable absorption measurement setup [17]. As a light source, we used a solid-state Yb:KGW laser delivering 200 fs pulses at 62 MHz repetition frequency [32]. Light with approx.…”

Section: Saturable Absorption Propertiesmentioning

confidence: 99%

Sb_2Te_3-deposited D-shaped fiber as a saturable absorber for mode-locked Yb-doped fiber lasers

Kowalczyk

Bogusławski

Zybała

et al. 2016

Opt. Mater. Express

View full text Add to dashboard Cite

We present a study on a antimony telluride (Sb 2 Te 3 )-deposited side-polished fiber device as a saturable absorber for Yb-doped modelocked fiber lasers. Thin layers of Sb 2 Te 3 with variable length were deposited by a pulsed magnetron sputtering technique. We demonstrate measured characteristics of the device and show that it can be treated as a hybrid component -tunable polarizer with saturable absorption properties. The polarizing extinction ratio varies from 1.5 dB up to 17.1 dB with increasing length of the deposition. The fiber components were employed in all-normal Yb-doped fiber cavities. All devices enabled for mode-locked operation by means of hybrid mode-locking or nonlinear polarization evolution mechanism. In particular, the laser with 2 mm long Sb 2 Te 3 absorber emitted 5.9 ps pulses with 4 mW of average output power.

show abstract

“…Distributed feedback (DFB) semiconductor lasers, characterized by high power and efficiency [1,2], narrow linewidth [3,4], and tunable wavelength [5] have many applications in laser communication [6,7], in radar [8], and as a pumping source [9]. The portion of the spectrum near 770 nm, which contains the transition lines of Mg, K, Fe, Ni, and many other atoms [10], also has many applications.…”

Section: Introductionmentioning

confidence: 99%

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Ruan

Chen

et al. 2021

Applied Sciences

View full text Add to dashboard Cite

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

show abstract

59 fs mode-locked Yb:KGW oscillator pumped by a single-mode laser diode

Cited by 17 publications

References 25 publications

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450 kW of peak power

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450 kW of peak power

Sb_2Te_3-deposited D-shaped fiber as a saturable absorber for mode-locked Yb-doped fiber lasers

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Contact Info

Product

Resources

About