5G mm-Wave front-end-module design with advanced SOI process

Li, Chaojiang; Wang, Min; Chi, Taiyun; Kumar, Arvind; Boenke, Myra; Wang, Dawn; Cahoon, Ned; Bandyopadhyay, Anirban; Joseph, A.J.; Wang, Hua

doi:10.1109/asicon.2017.8252651

Cited by 33 publications

(10 citation statements)

References 9 publications

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“…A 5G mmWave multi-band Doherty PA prototype was presented with outstanding PAE and power back-off efficiency [51]. A 5G K/Ka-Band PA prototype with high peak PAE (41.5%) at very wide frequency range (18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29) was also presented in [91]. Furthermore, [92] presents a 46 GHz PA with 42.5% peak PAE and 22.4 dBm P sat .…”

Section: Power Amplifiermentioning

confidence: 99%

Enabling Multi-Functional 5G and Beyond User Equipment: A Survey and Tutorial

Huo

Dong

et al. 2019

IEEE Access

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The fifth generation (5G) research and development has been fueled by many new breakthroughs in various areas. The recent progress in carrier aggregation (CA), licensed assisted access (LAA), massive MIMO (MaMi), beamforming techniques, cooperative spectrum sensing (CSS), compressive sensing (CS), machine learning, etc., has provided inspiring and promising approaches to address 5G and beyond challenges. However, at the user equipment (UE) end, limited design budget and hardware resources bring along a series of challenging implementation issues when delivering multi-standard and multi-functional wireless communications. In this paper, we first review recent advances in technical standards and critical enabling techniques, accompanied with several case studies of product developments. After the classification of typical 5G application and deployment scenarios, we propose and analyze a novel hardware reuse and multiplexing solution to facilitate cost-effective and energy-efficient UE design, followed by an investigation of state-of-the-art hardware development from the systems and circuits standpoint. Moreover, wireless UE hardware solutions, UE proof-of-concept (PoC) implementation and field test are proposed and discussed. Finally, the new trends of UE design and terahertz technologies for 5G and beyond applications are investigated and envisioned. LNA

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Section: Power Amplifiermentioning

confidence: 99%

Enabling Multi-Functional 5G and Beyond User Equipment: A Survey and Tutorial

Huo

Dong

et al. 2019

IEEE Access

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“…Second, in large phased arrays, the required output power levels for each antenna decrease as the number of antennas increases. This results in the fact that, in phased arrays, each antenna is preceded by a small or medium power amplifier (PA), which is preferably integrated in the transceiver RFIC [9][10][11][12][13][14][15][16]. Third, due to the high modulation schemes and high PAPR (peak to average power), wideband up to 400 MHz 256-QAM based OFDM signals are proposed, and the specified linearity requirements are very strict, as can be seen in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

et al. 2021

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This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with 13.7 dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are 20.5 dBm, 29% and 18.8 dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of 12.5% was measured at an average channel power of 14.5 dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal.

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“…This paper presents design, simulation, and measurements of a CMCD PA at 28 GHz utilizing Globalfoundries 22nm FDSOI technology. In order to overcome the breakdown voltage of the devices, increase efficiency, and deliver more output power, the implemented PA utilizes the cascode (stacking) topology [16]. In order to maximize efficiency, a new technique, pulse injection from the input transistor to the stacked transistor is proposed.…”

Section: Introductionmentioning

confidence: 99%

A 28-GHz Cascode Inverse Class-D Power Amplifier Utilizing Pulse Injection in 22-nm FDSOI

et al. 2020

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Current Mode Class-D (CMCD) Power Amplifiers are of particular interest in outphasing transmitters or Doherty configuration. This is because the output capacitance can be absorbed in the RLC output matching network and 100% theoretical efficiency. In this paper, a 28 GHz current mode (inverse) Class-D power amplifier was simulated, implemented, and measured in 22nm FDSOI. In order to overcome the breakdown voltages of the devices, the amplifier employs a stacked topology, which enables higher output powers and efficiency. The stacked transistors are also pulse injected to further increase the efficiency. Measurement results shows a peak PAE of 46%, peak drain efficiency (DE) of 71% and a saturated output power of 19 dBm. The implemented CMCD PA reports the best performance in literature compared to other CMOS based CMCD PAs.INDEX TERMS Current mode class-D, FDSOI CMOS, high efficiency, power added efficiency (PAE), power amplifier (PA), stacking.

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5G mm-Wave front-end-module design with advanced SOI process

Cited by 33 publications

References 9 publications

Enabling Multi-Functional 5G and Beyond User Equipment: A Survey and Tutorial

Enabling Multi-Functional 5G and Beyond User Equipment: A Survey and Tutorial

Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

A 28-GHz Cascode Inverse Class-D Power Amplifier Utilizing Pulse Injection in 22-nm FDSOI

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