2017 IEEE Applied Power Electronics Conference and Exposition (APEC) 2017
DOI: 10.1109/apec.2017.7930912
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6.78 MHz self-oscillating parallel resonant converter based on GaN technology

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Cited by 11 publications
(9 citation statements)
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“…Instead of the class-E inverter, recent rapid evolution of large bandgap semiconductor switches (Silicon-carbide (SiC) and Gallium-nitride (GaN) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)) and their gate drivers have enabled significant advancement of radio-frequency halfand full-bridge switch-mode inverters. Multiple papers reported on GaN-based full-bridge inverters for WPT systems in 2017 [24][25][26]. Zhao et al proposed a multi-frequency pulse-width-modulation (MFPWM) scheme which was implemented using a GaN-based full-bridge inverter [24].…”
Section: Transmitter and Receiver Coil Designmentioning
confidence: 99%
“…Instead of the class-E inverter, recent rapid evolution of large bandgap semiconductor switches (Silicon-carbide (SiC) and Gallium-nitride (GaN) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)) and their gate drivers have enabled significant advancement of radio-frequency halfand full-bridge switch-mode inverters. Multiple papers reported on GaN-based full-bridge inverters for WPT systems in 2017 [24][25][26]. Zhao et al proposed a multi-frequency pulse-width-modulation (MFPWM) scheme which was implemented using a GaN-based full-bridge inverter [24].…”
Section: Transmitter and Receiver Coil Designmentioning
confidence: 99%
“…Proof For any value of parameter Q, system (1)-(2) can be reduced to (5)- (6). If Q > 1/2, the parameter γ in (7) is well defined.…”
Section: Canonical Formsmentioning
confidence: 99%
“…As a consequence, a renewed interest has emerged in resonant conversion. In particular, resonant inverters have recently gained more popularity in emerging applications such as wireless power transfer [4][5][6], battery charging in electrical vehicles [7], induction heating [8] and powering high intensity discharge lamps [9], among others.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, two standards were created; Qi [1] and AirFuel [2]. Research activities, addressing the lower frequency (87 -205 kHz) Qi standard [3]- [7] and the higher frequency (6.78 MHz) AirFuel standard [8]- [18], grew as well. Some work [19], [20] are targeting both standards and other work [21], [22] reported operation outside those standards.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore this work focuses on the AirFuel standard. Gallium nitride (GaN) devices are used in [12], [15], [18] to reduce switching losses on the Tx side. Synchronous rectifiers, typically used in high power applications [23], [24], address the conduction losses on the Rx side in [3], [7], [13].…”
Section: Introductionmentioning
confidence: 99%