6-inch circle template fabrication for patterned media using a conventional resist and new chemically amplified resists

Abstract

Nanoimprint lithography (NIL) is one promising candidate for fabricating a patterned media to be used in the next generation of hard disk drives. It is expected that the pitch, characterizing the feature size of the media will become as small as about 50 nm for discrete-track recording (DTR) in 2010 or 2011. There are two major issues, one is fine groove formation and the other is long e-beam writing time. Writing time is estimated more than one week if we use ZEP520A-resist. To solve these problems, master template fabrication processes using combination of silicon substrate and new CAR were evaluated. As a result, the capability of 1:2 groove and land ratio 50 nm pitch LS pattern formation with new CAR which sensitivity is approximately 2.5 times higher than ZEP520A was shown.