60 GHz CMOS gain‐boosted LNA with transformer feedbacked neutraliser

Kim, Ki‐Jin; Lee, Suk-Hui; Park, Sanghoon; Ahn, Kwang–Ho

doi:10.1049/el.2015.0336

Cited by 12 publications

(7 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Most of the high-frequency LNAs work with high-gain and low NF at the cost of linearity. The LNA circuit in Kim et al 25 reaches the maximum gain of 30 dB, minimal noise of 4.6 dB, and the bandwidth is greater than 9 GHz. But the IIP3 is less than À20 dBm, which can be improved further for better performance.…”

Section: Linearity Enhancementmentioning

confidence: 99%

A 60‐GHz low‐noise amplifier with +7.258‐dBm third‐order input intercept point using current reuse feedforward distortion cancellation for 5G emerging communication

Veerasamy

Bhaskar

2022

Circuit Theory & Apps

View full text Add to dashboard Cite

In the ever-growing 5G technology, the millimetre-wave (mmWave) frequency spectrum is the inevitable mainstream for high-speed wireless communication.The wide-ranging spectrum bandwidth of the mmWave frequency attracts interest in radio frequency (RF) front-end design which will be very much beneficial for security and cellular-based applications such as intersatellite communication and automotive vehicle-to-vehicle communication. The RF front end requires low-power and low-noise receiver architecture for effective satellite communication, and it needs high throughput with maximum data transfer for cellular-based applications. To address these challenges, this paper presents a novel low-noise amplifier (LNA) operating from 57.12-to 66.25-GHz frequency. The design is implemented using UMC 65-nm CMOS process technology, and the post-layout simulations are carried out using the Cadence Spectre RF tool. At 60 GHz, the LNA exhibits a power gain of 15.46 dB, minimum noise figure (NF) of 1.32 dB while consuming 6.59 mW from a 1.2-V supply. The LNA employs the current reuse feedforward distortion cancelation technique to improve the third-order input intercept point (IIP3) to +7.258 dBm. The proposed LNA provides a relatively better figure of merit compared to some of the recently proposed mmWave LNA architectures.

show abstract

Section: Linearity Enhancementmentioning

confidence: 99%

A 60‐GHz low‐noise amplifier with +7.258‐dBm third‐order input intercept point using current reuse feedforward distortion cancellation for 5G emerging communication

Veerasamy

Bhaskar

2022

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…Compared to differential design with neutralisation capacitance, single-ended designs can achieve similar effects with lower power consumption and smaller silicon area. A CS stage instead of the traditional cascode stage is selected because the CS stage offers higher gain than the cascode stage in the mm-wave bands under low supply voltage [16].…”

Section: Proposed Lna Employing Transformer-feedbackmentioning

confidence: 99%

“…However, a CMOS Rx front-end suffers several drawbacks in terms of noise and linearity, which limit the detectable range and sensitivity of the radar systems [4]. Many circuit structures have been proposed to improve the performance of CMOS Rx for 77 GHz application [5][6][7][8][9][10][11][12][13][14][15][16], but the linearity of CMOS Rx is still limited and many of them occupy a large silicon area. In order to meet the different requirements of automotive radar supporting both short-and longrange communications, the Rx front-end requires high linearity.…”

Section: Introductionmentioning

confidence: 99%

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Pan

Daun

Sun

et al. 2019

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1-9.1 dB over the frequency range of 68.9-80.2 GHz, an NF of 7.8-9.1 dB over the range of 76-81 GHz, and LO-radio frequency isolation of 55-60 dB over 60-90 GHz. The input −1 dB compression point P 1 dB is measured to be −16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm 2 excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V.

show abstract

“…Transformer can be used in feedback network to achieve wideband input matching [51]. In addition, a transformer feedbacked capacitor neutralizer was proposed to boost the gain of an LNA [52]. Furthermore, transformers can be used as balun-based matching networks.…”

Section: Transformer Based Impedance Matchingmentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

View full text Add to dashboard Cite

This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

show abstract

60 GHz CMOS gain‐boosted LNA with transformer feedbacked neutraliser

Cited by 12 publications

References 9 publications

A 60‐GHz low‐noise amplifier with +7.258‐dBm third‐order input intercept point using current reuse feedforward distortion cancellation for 5G emerging communication

A 60‐GHz low‐noise amplifier with +7.258‐dBm third‐order input intercept point using current reuse feedforward distortion cancellation for 5G emerging communication

Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Contact Info

Product

Resources

About