60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

Abstract

The influence of double deck T-gate on LG=0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1×10 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45 % increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length

“…[ 19 ] Neha [ 20 ] adopted the method of increasing the gate field plate and source field plate, reduced the gate length to 0.25 μm, and obtained the maximum cut‐off frequency of the device is 38 GHz, and the breakdown voltage is 127 V. ASA. Fletcher [ 21 ] increased the device's breakdown voltage by using a double‐layer T‐type gate, the breakdown voltage reached 136 V, and the cut‐off frequency was 60 GHz. Ghaffari et al [ 22 ] adopted a three‐tooth structure and modified the depletion layer in the channel to improve the device performance, with a breakdown voltage of 169.5 V and a cut‐off frequency of 19.3 GHz.…”